Part Details for BSZ0589NSATMA1 by Infineon Technologies AG
Overview of BSZ0589NSATMA1 by Infineon Technologies AG
- Distributor Offerings: (16 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSZ0589NSATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
73AJ1978
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Newark | Mosfet Single, 17A, 30V, 2.1W Rohs Compliant: Yes |Infineon BSZ0589NSATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 7094 |
|
$0.4430 / $1.0700 | Buy Now |
DISTI #
BSZ0589NSATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 17A TSDSON Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
9792 In Stock |
|
$0.3864 / $1.0300 | Buy Now |
DISTI #
BSZ0589NSATMA1
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Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ0589NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.4791 | Buy Now |
DISTI #
726-BSZ0589NSATMA1
|
Mouser Electronics | MOSFET TRENCH <= 40V RoHS: Compliant | 5962 |
|
$0.3870 / $1.0300 | Buy Now |
DISTI #
73573714
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Verical | Trans MOSFET N-CH 30V 17A 8-Pin TSDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2345 | Americas - 95000 |
|
$0.4977 | Buy Now |
DISTI #
79931889
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Verical | Trans MOSFET N-CH 30V 17A 8-Pin TSDSON EP T/R Min Qty: 37 Package Multiple: 1 Date Code: 2412 | Americas - 5000 |
|
$0.5163 / $0.8725 | Buy Now |
DISTI #
BSZ0589NSATMA1
|
Avnet Americas | DIFFERENTIATED MOSFETS - Tape and Reel (Alt: BSZ0589NSATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.4791 | Buy Now |
|
Ameya Holding Limited | Min Qty: 1260 | 20000 |
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$0.9762 / $1.0065 | Buy Now |
|
Chip1Cloud | MOSFET N-CH 30V 17A TSDSON | 3180 |
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RFQ | |
DISTI #
C1S322000652680
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Chip1Stop | Trans MOSFET N-CH 30V 17A 8-Pin TSDSON EP T/R RoHS: Compliant Container: Cut Tape | 5000 |
|
$0.4050 / $0.8510 | Buy Now |
Part Details for BSZ0589NSATMA1
BSZ0589NSATMA1 CAD Models
BSZ0589NSATMA1 Part Data Attributes:
|
BSZ0589NSATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSZ0589NSATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSDSON-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, S-PDSO-N3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 20 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 20 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 17 A | |
Drain-source On Resistance-Max | 0.0053 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 68 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSZ0589NSATMA1
This table gives cross-reference parts and alternative options found for BSZ0589NSATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ0589NSATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDS7064A | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, BOTTOMLESS, SO-8 | Fairchild Semiconductor Corporation | BSZ0589NSATMA1 vs FDS7064A |
NTTFS4985NFTAG | Single N-Channel Power MOSFET 30V, 64A, 3.5mΩ, WDFN8 3.3x3.3, 0.65P, 1500-REEL | onsemi | BSZ0589NSATMA1 vs NTTFS4985NFTAG |
BSF045N03MQ3G | Power Field-Effect Transistor, 18A I(D), 30V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2 | Infineon Technologies AG | BSZ0589NSATMA1 vs BSF045N03MQ3G |
BSB053N03LPG | Power Field-Effect Transistor, 17A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | Infineon Technologies AG | BSZ0589NSATMA1 vs BSB053N03LPG |
NTMFS4985NFT3G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 5000-REEL | onsemi | BSZ0589NSATMA1 vs NTMFS4985NFT3G |
NTMFS4985NFT1G | Single N-Channel Power MOSFET 30V, 65A, 3.4mΩ, DFN5 5X6, 1.27P (SO 8FL), 1500-REEL | onsemi | BSZ0589NSATMA1 vs NTMFS4985NFT1G |
FDMS8672S | Power Field-Effect Transistor, 17A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | BSZ0589NSATMA1 vs FDMS8672S |
BSZ0904NSI | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSZ0589NSATMA1 vs BSZ0904NSI |
FDS7068SN3 | Power Field-Effect Transistor, 19A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | BSZ0589NSATMA1 vs FDS7068SN3 |
BSZ0904NSIATMA1 | Power Field-Effect Transistor, 18A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 | Infineon Technologies AG | BSZ0589NSATMA1 vs BSZ0904NSIATMA1 |