Datasheets
MUN5111DW1T1 by:

100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR

Part Details for MUN5111DW1T1 by Motorola Mobility LLC

Overview of MUN5111DW1T1 by Motorola Mobility LLC

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Part Details for MUN5111DW1T1

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MUN5111DW1T1 Part Data Attributes:

MUN5111DW1T1 Motorola Mobility LLC
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MUN5111DW1T1 Motorola Mobility LLC 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A
Collector-Emitter Voltage-Max 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type PNP
Power Dissipation Ambient-Max 0.15 W
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for MUN5111DW1T1

This table gives cross-reference parts and alternative options found for MUN5111DW1T1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MUN5111DW1T1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MUN5111DW1T1G Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL onsemi MUN5111DW1T1 vs MUN5111DW1T1G
MUN5111DW1T1 100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-02, SC-70, SC-88, 6 PIN Rochester Electronics LLC MUN5111DW1T1 vs MUN5111DW1T1
Part Number Description Manufacturer Compare
BCR142W Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Siemens MUN5111DW1T1 vs BCR142W
BCW60FN Small Signal Bipolar Transistor, 0.1A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon, TO-236 Siemens MUN5111DW1T1 vs BCW60FN
PDTA144TE 100mA, 50V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN NXP Semiconductors MUN5111DW1T1 vs PDTA144TE
BRC143EMP Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3 Hitachi Ltd MUN5111DW1T1 vs BRC143EMP
BCR183S Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon Siemens MUN5111DW1T1 vs BCR183S
BCR533 Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon Siemens MUN5111DW1T1 vs BCR533
PUMB11,115 PEMB11; PUMB11 - PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ TSSOP 6-Pin NXP Semiconductors MUN5111DW1T1 vs PUMB11,115
934056289115 TRANSISTOR 100 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, UMT6, SC-88, 6 PIN, BIP General Purpose Small Signal NXP Semiconductors MUN5111DW1T1 vs 934056289115
BRC144EMP Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, MPAK-3 Hitachi Ltd MUN5111DW1T1 vs BRC144EMP
BCR183W Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Siemens MUN5111DW1T1 vs BCR183W

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