MUN5111DW1T1 vs MUN5111DW1T1 feature comparison

MUN5111DW1T1 Motorola Mobility LLC

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MUN5111DW1T1 Rochester Electronics LLC

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Part Life Cycle Code Transferred Active
Ihs Manufacturer MOTOROLA INC ROCHESTER ELECTRONICS LLC
Package Description SMALL OUTLINE, R-PDSO-G6 CASE 419B-02, SC-70, SC-88, 6 PIN
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1 BUILT-IN BIAS RESISTOR RATIO IS 1
Collector Current-Max (IC) 0.1 A 0.1 A
Collector-Emitter Voltage-Max 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 35 35
JESD-30 Code R-PDSO-G6 R-PDSO-G6
JESD-609 Code e0 e0
Number of Elements 2 2
Number of Terminals 6 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type PNP PNP
Power Dissipation Ambient-Max 0.15 W
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified COMMERCIAL
Surface Mount YES YES
Terminal Finish Tin/Lead (Sn/Pb) TIN LEAD
Terminal Form GULL WING GULL WING
Terminal Position DUAL DUAL
Transistor Element Material SILICON SILICON
Base Number Matches 1 1
Pbfree Code No
Rohs Code No
Part Package Code SC-88
Pin Count 6
Manufacturer Package Code CASE 419B-02
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING

Compare MUN5111DW1T1 with alternatives

Compare MUN5111DW1T1 with alternatives