Parametric results for: MUN5111DW1T1 under Small Signal Bipolar Transistors

All Filters Additional Feature Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

BUILT-IN BIAS RESISTOR RATIO IS 1 5

11 hits Apply

Collector Current-Max (IC) (1)

100 mA 10

11 hits Apply

Collector-Emitter Voltage-Max (1)

50 V 6

11 hits Apply

Configuration (1)

SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR 6

11 hits Apply

DC Current Gain-Min (hFE) (1)

35.0 10

11 hits Apply

R-PDSO-G6 6

11 hits Apply

e0 4 e3 3

11 hits Apply

Manufacturer (6)

Freescale Semiconductor 1 LRC Leshan Radio Co Ltd 4 Motorola Mobility LLC 1 Motorola Semiconductor Products 1 onsemi 3 Rochester Electronics LLC 1

11 hits Apply

1 4

11 hits Apply

Number of Elements (1)

2 10

11 hits Apply

Number of Terminals (1)

6 6

11 hits Apply

150.0 °C 3

11 hits Apply

PLASTIC/EPOXY 6

11 hits Apply

RECTANGULAR 6

11 hits Apply

SMALL OUTLINE 6

11 hits Apply

Active 5 Contact Manufacturer 2 Obsolete 2 Transferred 2

11 hits Apply

No 1 Yes 4

11 hits Apply

235 1 260 3 NOT SPECIFIED 1

11 hits Apply

Polarity/Channel Type (1)

PNP 10

11 hits Apply

150 mW 2

11 hits Apply

150 mW 5 385 mW 4

Min (W) - Max (W)

11 hits Apply

Surface Mount (1)

YES 10

11 hits Apply