Datasheets
MTP5N05 by:

5A, 50V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for MTP5N05 by Motorola Mobility LLC

Overview of MTP5N05 by Motorola Mobility LLC

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Part Details for MTP5N05

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MTP5N05 Part Data Attributes:

MTP5N05 Motorola Mobility LLC
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MTP5N05 Motorola Mobility LLC 5A, 50V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 50 W
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 60 ns
Turn-on Time-Max (ton) 100 ns

Alternate Parts for MTP5N05

This table gives cross-reference parts and alternative options found for MTP5N05. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP5N05, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTP8N10E 8A, 100V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP5N05 vs MTP8N10E
IRF523-001 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP5N05 vs IRF523-001
IRF522 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP5N05 vs IRF522
IRF522 Power Field-Effect Transistor, 7A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors MTP5N05 vs IRF522
BUK452-100A TRANSISTOR 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors MTP5N05 vs BUK452-100A
IRF522 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation MTP5N05 vs IRF522
IRF521-001 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP5N05 vs IRF521-001
IRF521 Power Field-Effect Transistor, 9.2A I(D), 60V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN TT Electronics Resistors MTP5N05 vs IRF521
IRF523-006 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP5N05 vs IRF523-006
IRF521 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP5N05 vs IRF521
Part Number Description Manufacturer Compare
IRF523 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor MTP5N05 vs IRF523
IRF523-001 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier MTP5N05 vs IRF523-001
BUK442-100B TRANSISTOR 6.1 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors MTP5N05 vs BUK442-100B
IRF523 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP5N05 vs IRF523
IRF521 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP5N05 vs IRF521
IRF522 Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTP5N05 vs IRF522
IRF522 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP5N05 vs IRF522
IRF521 8A, 60V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC MTP5N05 vs IRF521
IRF520 Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN International Rectifier MTP5N05 vs IRF520
IRF523 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP5N05 vs IRF523

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