Part Details for IRF521 by Harris Semiconductor
Overview of IRF521 by Harris Semiconductor
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRF521
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRF521-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 485 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
26458 In Stock |
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$0.6200 | Buy Now |
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Bristol Electronics | 267 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 8 |
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$2.2310 / $2.4250 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-220AB | 155 |
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$2.5345 / $4.1100 | Buy Now |
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Rochester Electronics | 9.2A, 80V, 0.27 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 26458 |
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$0.5318 / $0.6256 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 25 |
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Buy Now |
Part Details for IRF521
IRF521 CAD Models
IRF521 Part Data Attributes:
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IRF521
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRF521
Harris Semiconductor
Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 80 V | |
| Drain Current-Max (ID) | 9.2 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 60 W | |
| Power Dissipation-Max (Abs) | 60 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 59 ns | |
| Turn-on Time-Max (ton) | 58 ns |
Alternate Parts for IRF521
This table gives cross-reference parts and alternative options found for IRF521. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF521, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF521-010 | Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF521 vs IRF521-010 |
| IRF523-006 | Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF521 vs IRF523-006 |
| IRF522 | 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | STMicroelectronics | IRF521 vs IRF522 |
| IRF522-009 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF521 vs IRF522-009 |
| IRF522-010 | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF521 vs IRF522-010 |
| MTP8N10E | Power Field-Effect Transistor, 8A I(D), 100V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Motorola Semiconductor Products | IRF521 vs MTP8N10E |
| MTP10N10E | 10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN | onsemi | IRF521 vs MTP10N10E |
| IRF521 | Power Field-Effect Transistor, 9.2A I(D), 60V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | IRF521 vs IRF521 |
| IRF521 | 8A, 60V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | IRF521 vs IRF521 |
| IRF523-001 | Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | IRF521 vs IRF523-001 |