Part Details for MTP10N10E by Texas Instruments
Overview of MTP10N10E by Texas Instruments
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Education and Research
Energy and Power Systems
Part Details for MTP10N10E
MTP10N10E CAD Models
MTP10N10E Part Data Attributes:
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MTP10N10E
Texas Instruments
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Datasheet
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MTP10N10E
Texas Instruments
10A, 100V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | NATIONAL SEMICONDUCTOR CORP | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 70 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for MTP10N10E
This table gives cross-reference parts and alternative options found for MTP10N10E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP10N10E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP8N10E | 8A, 100V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP10N10E vs MTP8N10E |
| IRF523-001 | Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP10N10E vs IRF523-001 |
| IRF522 | 7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP10N10E vs IRF522 |
| IRF522 | Power Field-Effect Transistor, 7A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | MTP10N10E vs IRF522 |
| BUK452-100A | TRANSISTOR 11 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | MTP10N10E vs BUK452-100A |
| IRF522 | 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | MTP10N10E vs IRF522 |
| IRF521-001 | Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP10N10E vs IRF521-001 |
| IRF521 | Power Field-Effect Transistor, 9.2A I(D), 60V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | TT Electronics Resistors | MTP10N10E vs IRF521 |
| IRF523-006 | Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier | MTP10N10E vs IRF523-006 |
| IRF521 | Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | MTP10N10E vs IRF521 |