Datasheets
MTD3055V-1 by:

12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3

Part Details for MTD3055V-1 by onsemi

Overview of MTD3055V-1 by onsemi

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for MTD3055V-1

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MTD3055V-1 Part Data Attributes:

MTD3055V-1 onsemi
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MTD3055V-1 onsemi 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer ON SEMICONDUCTOR
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Manufacturer Package Code CASE 369D-01
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 72 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 48 W
Pulsed Drain Current-Max (IDM) 37 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for MTD3055V-1

This table gives cross-reference parts and alternative options found for MTD3055V-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTD3055V-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTD3055EL1 TRANSISTOR 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, FET General Purpose Power National Semiconductor Corporation MTD3055V-1 vs MTD3055EL1
MTD1N50E 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD3055V-1 vs MTD1N50E
MTD3055V1 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi MTD3055V-1 vs MTD3055V1
MTD3055VT4 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3 onsemi MTD3055V-1 vs MTD3055VT4
MTD1N50ET4 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET Motorola Mobility LLC MTD3055V-1 vs MTD1N50ET4
MTD20N06HDL1 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3 onsemi MTD3055V-1 vs MTD20N06HDL1
MTD1N50ET4 1A, 500V, 5ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 onsemi MTD3055V-1 vs MTD1N50ET4
MTD3055EL1 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 Motorola Mobility LLC MTD3055V-1 vs MTD3055EL1
MTD3055EL-1 10A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 Motorola Mobility LLC MTD3055V-1 vs MTD3055EL-1
MTD20N06HDL-1 20A, 60V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369-07, DPAK-3 Motorola Mobility LLC MTD3055V-1 vs MTD20N06HDL-1
Part Number Description Manufacturer Compare
IRFR024NTR Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier MTD3055V-1 vs IRFR024NTR
RFD14N06L 14A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA Intersil Corporation MTD3055V-1 vs RFD14N06L
RFP14N05L Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor MTD3055V-1 vs RFP14N05L
NTD3055L170-1G Single N-Channel Logic Level Power MOSFET 60V, 9A, 170mΩ, DPAK INSERTION MOUNT, 75-TUBE onsemi MTD3055V-1 vs NTD3055L170-1G
BUK553-60B TRANSISTOR 20 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors MTD3055V-1 vs BUK553-60B
BUZ71 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET TT Electronics Power and Hybrid / Semelab Limited MTD3055V-1 vs BUZ71
IRFZ30 Power Field-Effect Transistor, 30A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products MTD3055V-1 vs IRFZ30
HUF76429D3S Power Field-Effect Transistor, 20A I(D), 60V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation MTD3055V-1 vs HUF76429D3S
RFD14N05 Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA Harris Semiconductor MTD3055V-1 vs RFD14N05
STD20NE06 20A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, DPAK-3 STMicroelectronics MTD3055V-1 vs STD20NE06

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