Part Details for MRF7S21170HSR3 by Freescale Semiconductor
Overview of MRF7S21170HSR3 by Freescale Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for MRF7S21170HSR3
| Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 6 |
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$136.3608 / $151.5120 | Buy Now |
Part Details for MRF7S21170HSR3
MRF7S21170HSR3 CAD Models
MRF7S21170HSR3 Part Data Attributes:
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MRF7S21170HSR3
Freescale Semiconductor
Buy Now
Datasheet
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Compare Parts:
MRF7S21170HSR3
Freescale Semiconductor
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Package Description | ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE 465C-02 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | S BAND | |
| JESD-30 Code | R-CDFP-F2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 225 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF7S21170HSR3
This table gives cross-reference parts and alternative options found for MRF7S21170HSR3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF7S21170HSR3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MRF6S18060NR1 | GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF6S18060NR1 |
| MRF8HP21130HSR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF8HP21130HSR3 |
| MRF7S19120NR1 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 36 W Avg., 28 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF7S19120NR1 |
| MRF6S19140HSR3 | 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF6S19140HSR3 |
| MRF8S21200HR6 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 48 W Avg., 28 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF8S21200HR6 |
| MRF19045SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN | Motorola Mobility LLC | MRF7S21170HSR3 vs MRF19045SR3 |
| MRF6S19060NR1 | 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 12 W Avg., 28 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF6S19060NR1 |
| MRF8S19260HR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 74 W Avg., 30 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF8S19260HR6 |
| MRF19045R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN | Motorola Mobility LLC | MRF7S21170HSR3 vs MRF19045R3 |
| MRF8S18120HR3 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V | Freescale Semiconductor | MRF7S21170HSR3 vs MRF8S18120HR3 |