Part Details for MRF6S19060NR1 by Freescale Semiconductor
Overview of MRF6S19060NR1 by Freescale Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Price & Stock for MRF6S19060NR1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-MRF6S19060NR1-ND
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DigiKey | RF MOSFET LDMOS 28V TO270-4 Min Qty: 7 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
744 In Stock |
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$47.7400 | Buy Now |
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Rochester Electronics | RF L Band, N-Channel Power MOSFET, TO-270 RoHS: Compliant Status: Obsolete Min Qty: 1 | 744 |
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$40.9700 / $48.2000 | Buy Now |
Part Details for MRF6S19060NR1
MRF6S19060NR1 CAD Models
MRF6S19060NR1 Part Data Attributes:
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MRF6S19060NR1
Freescale Semiconductor
Buy Now
Datasheet
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Compare Parts:
MRF6S19060NR1
Freescale Semiconductor
2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 12 W Avg., 28 V
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
| Part Package Code | TO-270 | |
| Package Description | ROHS COMPLIANT, PLASTIC, CASE 1486-03, WB-4, 4 PIN | |
| Pin Count | 2 | |
| Manufacturer Package Code | CASE 1486-03 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.75 | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 68 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Highest Frequency Band | L BAND | |
| JEDEC-95 Code | TO-270 | |
| JESD-30 Code | R-PDFP-F4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLATPACK | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 208 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | SILICON |
Alternate Parts for MRF6S19060NR1
This table gives cross-reference parts and alternative options found for MRF6S19060NR1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF6S19060NR1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MRF6S18060NR1 | GSM/GSM EDGE Lateral N-Channel RF Power MOSFET, 1800-2000 MHz, 60 W, 26 V | Freescale Semiconductor | MRF6S19060NR1 vs MRF6S18060NR1 |
| MRF7S21170HSR3 | S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 2 PIN | Freescale Semiconductor | MRF6S19060NR1 vs MRF7S21170HSR3 |
| MRF8HP21130HSR3 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 28 W Avg., 28 V | Freescale Semiconductor | MRF6S19060NR1 vs MRF8HP21130HSR3 |
| MRF7S19120NR1 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 36 W Avg., 28 V | Freescale Semiconductor | MRF6S19060NR1 vs MRF7S19120NR1 |
| MRF6S19140HSR3 | 2 x N-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 29 W Avg., 28 V | Freescale Semiconductor | MRF6S19060NR1 vs MRF6S19140HSR3 |
| MRF8S21200HR6 | W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170 MHz, 48 W Avg., 28 V | Freescale Semiconductor | MRF6S19060NR1 vs MRF8S21200HR6 |
| MRF19045SR3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400S, CASE 465F-04, 2 PIN | Motorola Mobility LLC | MRF6S19060NR1 vs MRF19045SR3 |
| MRF8S19260HR6 | Single W-CDMA Lateral N-Channel RF Power MOSFET, 1930-1990 MHz, 74 W Avg., 30 V | Freescale Semiconductor | MRF6S19060NR1 vs MRF8S19260HR6 |
| MRF19045R3 | L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-400, CASE 465E-04, 2 PIN | Motorola Mobility LLC | MRF6S19060NR1 vs MRF19045R3 |
| MRF8S18120HR3 | GSM, GSM EDGE Lateral N-Channel RF Power MOSFET, 1805-1880 MHz, 72 W CW, 28 V | Freescale Semiconductor | MRF6S19060NR1 vs MRF8S18120HR3 |