Datasheets
MRF314 by:

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CASE 211-07, 4 PIN

Part Details for MRF314 by MACOM

Overview of MRF314 by MACOM

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Environmental Monitoring Internet of Things (IoT) Audio and Video Systems Smart Cities Agriculture Technology Communication and Networking Robotics and Drones

Price & Stock for MRF314

Part # Distributor Description Stock Price Buy
DISTI # 1465-1176-ND
DigiKey RF TRANS NPN 35V 211-07 Min Qty: 1 Lead time: 34 Weeks Container: Tray 395
In Stock
  • 1 $40.3000
$40.3000 Buy Now
DISTI # 937-MRF314
Mouser Electronics RF Bipolar Transistors 30-200MHz 30Watts 28Volt Gain 10dB RoHS: Compliant 108
  • 1 $40.3000
  • 100 $40.2900
$40.2900 / $40.3000 Buy Now
DISTI # MRF314
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 0
  • 1 $49.2600
$49.2600 Buy Now
Chip1Cloud TRANS RF NPN 35V 3.4A 211-07 / Trans RF BJT NPN 35V 3.4A 4-Pin Case 211-07 4790
RFQ

Part Details for MRF314

MRF314 Part Data Attributes:

MRF314 MACOM
Buy Now Datasheet
Compare Parts:
MRF314 MACOM RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, CASE 211-07, 4 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, O-CRFM-F4
Pin Count 4
Manufacturer Package Code CASE 211-07
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer MACOM
Additional Feature HIGH RELIABILITY
Collector Current-Max (IC) 3.4 A
Collector-Base Capacitance-Max 40 pF
Collector-Emitter Voltage-Max 35 V
Configuration SINGLE
DC Current Gain-Min (hFE) 20
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 82 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for MRF314

This table gives cross-reference parts and alternative options found for MRF314. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MRF314, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MRF314 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc MRF314 vs MRF314
BLW84 TRANSISTOR VHF BAND, Si, NPN, RF POWER TRANSISTOR, BIP RF Power NXP Semiconductors MRF314 vs BLW84
Part Number Description Manufacturer Compare
2N5642 VHF BAND, Si, NPN, RF POWER TRANSISTOR, 0.380 INCH, STUD PACKAGE-4 STMicroelectronics MRF314 vs 2N5642
SD1018 RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, PLASTIC, M135, 4 PIN Microsemi Corporation MRF314 vs SD1018
933582620112 TRANSISTOR 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR, CERAMIC PACKAGE-8, BIP RF Power NXP Semiconductors MRF314 vs 933582620112
TP9380 VHF BAND, Si, NPN, RF POWER TRANSISTOR Motorola Mobility LLC MRF314 vs TP9380
BLY93C RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, 0.380 INCH, FM-4 Advanced Semiconductor Inc MRF314 vs BLY93C
2N5642 RF Power Bipolar Transistor, Very High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc MRF314 vs 2N5642
SD1050 RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, M137, 3 PIN Advanced Power Technology MRF314 vs SD1050
MS1579 RF Power Bipolar Transistor, 2-Element, Ultra High Frequency Band, Silicon, NPN, 0.320 X 0.250 INCH, PLASTIC, M156, 4 PIN Microsemi Corporation MRF314 vs MS1579
UML25S RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, Advanced Semiconductor Inc MRF314 vs UML25S
HF75-50F RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4 Advanced Semiconductor Inc MRF314 vs HF75-50F

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