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Memory DRAMs K4H1G0638B-UCB00

Memory
K4H1G0638B-UCB00
Samsung Semiconductor
Description: DDR DRAM Module, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, STACKED, TSOP2-66

Overview of K4H1G0638B-UCB00 by Samsung Semiconductor

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Part Data Attributes for K4H1G0638B-UCB00 by Samsung Semiconductor
Parametric Data

K4H1G0638B-UCB00
Samsung Semiconductor
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
TSOP2
Package Description
SSOP, SSOP66,.46
Pin Count
66
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.32
Access Mode
FOUR BANK PAGE BURST
Access Time-Max
0.75 ns
Additional Feature
AUTO/SELF REFRESH
Clock Frequency-Max (fCLK)
133 MHz
I/O Type
COMMON
JESD-30 Code
R-PDSO-G66
Length
22.22 mm
Memory Density
1073741824 bit
Memory IC Type
DDR DRAM MODULE
Memory Width
4
Moisture Sensitivity Level
3
Number of Functions
1
Number of Ports
1
Number of Terminals
66
Number of Words
268435456 words
Number of Words Code
256000000
Operating Mode
SYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
256MX4
Output Characteristics
3-STATE
Package Body Material
PLASTIC/EPOXY
Package Code
SSOP
Package Equivalence Code
SSOP66,.46
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, SHRINK PITCH
Peak Reflow Temperature (Cel)
260
Qualification Status
Not Qualified
Refresh Cycles
8192
Seated Height-Max
2.59 mm
Self Refresh
YES
Standby Current-Max
0.01 A
Supply Current-Max
0.39 mA
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Surface Mount
YES
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Form
GULL WING
Terminal Pitch
0.65 mm
Terminal Position
DUAL
Width
10.16 mm
Want to compare parts?
  1. K4H1G0638B-UCB00
    Samsung Semiconductor
    DDR DRAM Module, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, STACKED, TSOP2-66
    VS

Alternate Parts for K4H1G0638B-UCB00

This table gives cross-reference parts and alternative options found for K4H1G0638B-UCB00. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H1G0638B-UCB00, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
K4H1G0638B-TCB0T Cache DRAM Module, 256MX4, 0.75ns, CMOS, PDSO64 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-TCB0T
K4H1G0638C-UCB0 Cache DRAM Module, 256MX4, 0.75ns, CMOS, PDSO64 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638C-UCB0
K4H1G0638B-TCAA DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-TCAA
K4H1G0638B-UCB0 Cache DRAM Module, 256MX4, 0.75ns, CMOS, PDSO64 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-UCB0
K4H1G0638B-TCB00 DDR DRAM Module, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, STACKED, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-TCB00
K4H1G0638B-UCA2T Cache DRAM Module, 256MX4, 0.75ns, CMOS, PDSO64 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-UCA2T
K4H1G0638B-TCA2 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-TCA2
K4H1G0638C-UCA2 Cache DRAM Module, 256MX4, 0.75ns, CMOS, PDSO64 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638C-UCA2
K4H1G0638B-TCA2T Cache DRAM Module, 256MX4, 0.75ns, CMOS, PDSO64 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-TCA2T
K4H1G0638C-UCA20 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, STACKED, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638C-UCA20
Part Number Description Manufacturer Compare
HYB25D1G400AEL-5 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG K4H1G0638B-UCB00 vs HYB25D1G400AEL-5
K4H1G0438M-ULB00 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0438M-ULB00
MT46V256M4TG-75 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0638B-UCB00 vs MT46V256M4TG-75
MT46V256M4P-75IT:A DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0638B-UCB00 vs MT46V256M4P-75IT:A
K4H1G0438A-UCB30 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0438A-UCB30
MT46V256M4TG-5B:A DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0638B-UCB00 vs MT46V256M4TG-5B:A
K4H1G0438M-ULA20 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0438M-ULA20
K4H1G0638B-TCA2 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0638B-TCA2
K4H1G0438A-ULB30 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H1G0638B-UCB00 vs K4H1G0438A-ULB30
MT46V256M4TG-75:A DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0638B-UCB00 vs MT46V256M4TG-75:A

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