Datasheets
K4H1G0438A-UCB30 by: Samsung Semiconductor

DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66

Part Details for K4H1G0438A-UCB30 by Samsung Semiconductor

Overview of K4H1G0438A-UCB30 by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K4H1G0438A-UCB30

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K4H1G0438A-UCB30 Part Data Attributes

K4H1G0438A-UCB30 Samsung Semiconductor
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K4H1G0438A-UCB30 Samsung Semiconductor DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Part Package Code TSOP2
Package Description TSOP2, TSSOP66,.46
Pin Count 66
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
Length 22.22 mm
Memory Density 1073741824 bit
Memory IC Type DDR1 DRAM
Memory Width 4
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.015 A
Supply Current-Max 0.24 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for K4H1G0438A-UCB30

This table gives cross-reference parts and alternative options found for K4H1G0438A-UCB30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H1G0438A-UCB30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H1G0438A-ULB30 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0438A-ULB30
K4H1G0438A-ULB3T DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0438A-ULB3T
K4H1G0438A-UCB3 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0438A-UCB3
Part Number Description Manufacturer Compare
HYB25D1G400AEL-5 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG K4H1G0438A-UCB30 vs HYB25D1G400AEL-5
K4H1G0438M-ULB00 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0438M-ULB00
MT46V256M4TG-75 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0438A-UCB30 vs MT46V256M4TG-75
MT46V256M4P-75IT:A DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0438A-UCB30 vs MT46V256M4P-75IT:A
MT46V256M4TG-5B:A DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0438A-UCB30 vs MT46V256M4TG-5B:A
K4H1G0438M-ULA20 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, LEAD FREE, TSOP2-66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0438M-ULA20
K4H1G0638B-TCA2 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0638B-TCA2
K4H1G0638B-UCB00 DDR DRAM Module, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, STACKED, TSOP2-66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0638B-UCB00
K4H1G0438A-ULB30 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 Samsung Semiconductor K4H1G0438A-UCB30 vs K4H1G0438A-ULB30
MT46V256M4TG-75:A DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0438A-UCB30 vs MT46V256M4TG-75:A

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