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Memory / DRAMs / MT46V256M4TG-75:A
Datasheets
MT46V256M4TG-75:A by: Micron Technology Inc

DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66

Part Details for MT46V256M4TG-75:A by Micron Technology Inc

Overview of MT46V256M4TG-75:A by Micron Technology Inc

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Applications Space Technology Computing and Data Storage Aerospace and Defense Telecommunications

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Price & Stock for MT46V256M4TG-75:A

Part # Distributor Description Stock Price Buy
Quest Components 256M X 4 DDR DRAM, 0.75 ns, PDSO66 18
  • 1 $65.0000
  • 9 $62.5000
  • 17 $60.0000
$60.0000 / $65.0000 Buy Now

Part Details for MT46V256M4TG-75:A

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MT46V256M4TG-75:A Part Data Attributes

Parametric Data
MT46V256M4TG-75:A Micron Technology Inc
Buy Now Datasheet
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MT46V256M4TG-75:A Micron Technology Inc DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICRON TECHNOLOGY INC
Part Package Code TSOP
Package Description 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66
Pin Count 66
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Samacsys Manufacturer Micron
Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.75 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e0
Length 22.22 mm
Memory Density 1073741824 bit
Memory IC Type DDR1 DRAM
Memory Width 4
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 268435456 words
Number of Words Code 256000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 2,4,8
Standby Current-Max 0.01 A
Supply Current-Max 0.485 mA
Supply Voltage-Max (Vsup) 2.7 V
Supply Voltage-Min (Vsup) 2.3 V
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Pitch 0.65 mm
Terminal Position DUAL
Width 10.16 mm

Alternate Parts for MT46V256M4TG-75:A

This table gives cross-reference parts and alternative options found for MT46V256M4TG-75:A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MT46V256M4TG-75:A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
MT46V256M4TG-75 Micron Technology Inc Check for Price DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 MT46V256M4TG-75:A vs MT46V256M4TG-75
MT46V256M4P-75 Micron Technology Inc Check for Price DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP-66 MT46V256M4TG-75:A vs MT46V256M4P-75
Part Number Manufacturer Composite Price Description Compare
HYB25D1G400AE-5 Infineon Technologies AG Check for Price DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 MT46V256M4TG-75:A vs HYB25D1G400AE-5
MT46V256M4P-6TIT:A Micron Technology Inc Check for Price DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP-66 MT46V256M4TG-75:A vs MT46V256M4P-6TIT:A
HYB25D1G400AT-5 Infineon Technologies AG Check for Price DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 MT46V256M4TG-75:A vs HYB25D1G400AT-5
MT46V256M4P-5B:A Micron Technology Inc Check for Price DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP-66 MT46V256M4TG-75:A vs MT46V256M4P-5B:A
K4H1G0438M-TCB0T Samsung Semiconductor Check for Price DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 MT46V256M4TG-75:A vs K4H1G0438M-TCB0T
HYB25D1G400ATL-7 Infineon Technologies AG Check for Price DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, PLASTIC, TSOP2-66 MT46V256M4TG-75:A vs HYB25D1G400ATL-7
HY5DU1G422T-H SK Hynix Inc Check for Price DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 MT46V256M4TG-75:A vs HY5DU1G422T-H
K4H1G0638B-TCA2 Samsung Semiconductor Check for Price DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 MT46V256M4TG-75:A vs K4H1G0638B-TCA2
HY5DU1G422LT-H SK Hynix Inc Check for Price DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 MT46V256M4TG-75:A vs HY5DU1G422LT-H
K4H1G0638B-UCA20 Samsung Semiconductor Check for Price DDR DRAM Module, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, STACKED, TSOP2-66 MT46V256M4TG-75:A vs K4H1G0638B-UCA20

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