Datasheets
K4H1G0438A-ULB3T by: Samsung Semiconductor

DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66

Part Details for K4H1G0438A-ULB3T by Samsung Semiconductor

Overview of K4H1G0438A-ULB3T by Samsung Semiconductor

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Applications Internet of Things (IoT) Environmental Monitoring Financial Technology (Fintech) Smart Cities Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Entertainment and Gaming

Part Details for K4H1G0438A-ULB3T

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K4H1G0438A-ULB3T Part Data Attributes

K4H1G0438A-ULB3T Samsung Semiconductor
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K4H1G0438A-ULB3T Samsung Semiconductor DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer SAMSUNG SEMICONDUCTOR INC
Package Description TSSOP, TSSOP66,.46
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.32
Access Time-Max 0.7 ns
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e3
Memory Density 1073741824 bit
Memory IC Type DDR1 DRAM
Memory Width 4
Moisture Sensitivity Level 1
Number of Terminals 66
Number of Words 268435456 words
Number of Words Code 256000000
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 256MX4
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSSOP
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Qualification Status Not Qualified
Refresh Cycles 8192
Sequential Burst Length 2,4,8
Standby Current-Max 0.015 A
Supply Current-Max 0.24 mA
Supply Voltage-Nom (Vsup) 2.5 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Pitch 0.635 mm
Terminal Position DUAL

Alternate Parts for K4H1G0438A-ULB3T

This table gives cross-reference parts and alternative options found for K4H1G0438A-ULB3T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K4H1G0438A-ULB3T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K4H1G0438A-UCB3 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66 Samsung Semiconductor K4H1G0438A-ULB3T vs K4H1G0438A-UCB3
K4H1G0438A-ULB3 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66 Samsung Semiconductor K4H1G0438A-ULB3T vs K4H1G0438A-ULB3
Part Number Description Manufacturer Compare
HYB25D1G400ATL-6 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG K4H1G0438A-ULB3T vs HYB25D1G400ATL-6
MT46V256M4TG-75IT:A DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0438A-ULB3T vs MT46V256M4TG-75IT:A
MT46V256M4P-6T DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0438A-ULB3T vs MT46V256M4P-6T
HY5DU1G422LT-M DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H1G0438A-ULB3T vs HY5DU1G422LT-M
K4H1G0638B-TCA2 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H1G0438A-ULB3T vs K4H1G0638B-TCA2
HY5DU1G422T-J DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 SK Hynix Inc K4H1G0438A-ULB3T vs HY5DU1G422T-J
K4H1G0638B-TLB00 DDR DRAM Module, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, STACKED, TSOP2-66 Samsung Semiconductor K4H1G0438A-ULB3T vs K4H1G0638B-TLB00
HYB25D1G400ATL-5 DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, PLASTIC, TSOP2-66 Infineon Technologies AG K4H1G0438A-ULB3T vs HYB25D1G400ATL-5
MT46V256M4P-6T:A DDR DRAM, 256MX4, 0.7ns, CMOS, PDSO66, 0.400 INCH, 0.65 MM PITCH, LEAD FREE, PLASTIC, TSOP-66 Micron Technology Inc K4H1G0438A-ULB3T vs MT46V256M4P-6T:A
K4H1G0638B-TCB0 DDR DRAM, 256MX4, 0.75ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH, TSOP2-66 Samsung Semiconductor K4H1G0438A-ULB3T vs K4H1G0638B-TCB0

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