Memory
K3P4V1000D-DC10
Samsung Semiconductor
Description: MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42

Overview of K3P4V1000D-DC10 by Samsung Semiconductor

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Computing and Data Storage

Available Datasheets

Part # Manufacturer Description Datasheet
ADC1038CIWM Rochester Electronics LLC ADC, Successive Approximation, 10-Bit, 1 Func, 8 Channel, Serial Access, PDSO20, SOP-20
ADC1005CCJ Rochester Electronics LLC ADC1005 - A/D Converter
TDC1044AR4C Rochester Electronics LLC ADC, Proprietary Method, 4-Bit, 1 Func, 1 Channel, Parallel, 4 Bits Access, Bipolar, PQCC20, PLASTIC, LCC-20

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Part Data Attributes for K3P4V1000D-DC10 by Samsung Semiconductor

K3P4V1000D-DC10
Samsung Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
DIP
Package Description
DIP, DIP42,.6
Pin Count
42
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8542.32.00.71
Access Time-Max
100 ns
Additional Feature
CONFIGURABLE AS 512K X 16
Alternate Memory Width
8
JESD-30 Code
R-PDIP-T42
JESD-609 Code
e0
Length
52.42 mm
Memory Density
8388608 bit
Memory IC Type
MASK ROM
Memory Width
16
Number of Functions
1
Number of Terminals
42
Number of Words
524288 words
Number of Words Code
512000
Operating Mode
ASYNCHRONOUS
Operating Temperature-Max
70 °C
Operating Temperature-Min
Organization
512KX16
Package Body Material
PLASTIC/EPOXY
Package Code
DIP
Package Equivalence Code
DIP42,.6
Package Shape
RECTANGULAR
Package Style
IN-LINE
Parallel/Serial
PARALLEL
Qualification Status
Not Qualified
Seated Height-Max
5.08 mm
Standby Current-Max
0.00003 A
Supply Current-Max
0.04 mA
Supply Voltage-Max (Vsup)
3.6 V
Supply Voltage-Min (Vsup)
3 V
Supply Voltage-Nom (Vsup)
3.3 V
Surface Mount
NO
Technology
CMOS
Temperature Grade
COMMERCIAL
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Pitch
2.54 mm
Terminal Position
DUAL
Width
15.24 mm
Want to compare parts?
  1. K3P4V1000D-DC10
    Samsung Semiconductor
    MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42
    VS

Alternate Parts for K3P4V1000D-DC10

This table gives cross-reference parts and alternative options found for K3P4V1000D-DC10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of K3P4V1000D-DC10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
MR27V852E-XXXRA MASK ROM, 512KX16, 100ns, CMOS, PDIP42, PLASTIC, DIP-42 LAPIS Semiconductor Co Ltd K3P4V1000D-DC10 vs MR27V852E-XXXRA
K3P4V1000E-DC10 MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42 Samsung Semiconductor K3P4V1000D-DC10 vs K3P4V1000E-DC10
MX23L8111PC-10 MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 Macronix International Co Ltd K3P4V1000D-DC10 vs MX23L8111PC-10
HY23V08200D-100 MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 SK Hynix Inc K3P4V1000D-DC10 vs HY23V08200D-100
MR27V852E-XXXRA MASK ROM, 512KX16, 100ns, CMOS, PDIP42, PLASTIC, DIP-42 OKI Electric Industry Co Ltd K3P4V1000D-DC10 vs MR27V852E-XXXRA
MR53V8052J-XXRA MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, 2.54 MM PITCH, PLASTIC, DIP-42 LAPIS Semiconductor Co Ltd K3P4V1000D-DC10 vs MR53V8052J-XXRA
KM23V8105D-10 MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42 Samsung Semiconductor K3P4V1000D-DC10 vs KM23V8105D-10
K3N4V1000D-DC100 MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42 Samsung Semiconductor K3P4V1000D-DC10 vs K3N4V1000D-DC100
MR27V802D-XXRA MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, 2.54 MM PITCH, PLASTIC, DIP-42 OKI Electric Industry Co Ltd K3P4V1000D-DC10 vs MR27V802D-XXRA
MR53V8002J-XXRA MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, 2.54 MM PITCH, PLASTIC, DIP-42 LAPIS Semiconductor Co Ltd K3P4V1000D-DC10 vs MR53V8002J-XXRA
Part Number Description Manufacturer Compare
K3N4C1000E-DC120 MASK ROM, 512KX16, 120ns, CMOS, PDIP42, 0.600 INCH, DIP-42 Samsung Semiconductor K3P4V1000D-DC10 vs K3N4C1000E-DC120
K3P4C1000E-DC100 MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, DIP-42 Samsung Semiconductor K3P4V1000D-DC10 vs K3P4C1000E-DC100
MSM27C802ZB-NRS OTP ROM, 1MX8, 120ns, CMOS, PDIP42, PLASTIC, DIP-42 OKI Electric Industry Co Ltd K3P4V1000D-DC10 vs MSM27C802ZB-NRS
LH538600D-10 MASK ROM, 1MX8, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 Sharp Corp K3P4V1000D-DC10 vs LH538600D-10
MR53V8002J-XXRA MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, 2.54 MM PITCH, PLASTIC, DIP-42 LAPIS Semiconductor Co Ltd K3P4V1000D-DC10 vs MR53V8002J-XXRA
AM27C800-125DEB UVPROM, 1MX8, 120ns, CMOS, CDIP42, WINDOWED, CERAMIC, DIP-42 AMD K3P4V1000D-DC10 vs AM27C800-125DEB
LH53B8V00D MASK ROM, 1MX8, 85ns, CMOS, PDIP42, DIP-42 Sharp Corp K3P4V1000D-DC10 vs LH53B8V00D
AM27C800-250/BXA UVPROM, 1MX8, 250ns, CMOS, CDIP42, WINDOWED, CERAMIC, DIP-42 AMD K3P4V1000D-DC10 vs AM27C800-250/BXA
MR53V8052J-XXRA MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, 2.54 MM PITCH, PLASTIC, DIP-42 LAPIS Semiconductor Co Ltd K3P4V1000D-DC10 vs MR53V8052J-XXRA
M27C800-150XF6 512KX16 UVPROM, 120ns, CDIP42, WINDOWED, FRIT SEALED, CERAMIC, DIP-42 STMicroelectronics K3P4V1000D-DC10 vs M27C800-150XF6

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