Datasheets
JANTX2N7225 by:

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN

Part Details for JANTX2N7225 by Infineon Technologies AG

Overview of JANTX2N7225 by Infineon Technologies AG

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Applications Industrial Automation

Price & Stock for JANTX2N7225

Part # Distributor Description Stock Price Buy
Future Electronics JANTX Series 200 V 105 mOhm 27.4 A Flange Mount Power Mosfet - TO-254AA RoHS: Not Compliant pbFree: No Min Qty: 100 Package Multiple: 1 Container: Tray 0
Tray
  • 1 $98.2900
  • 3 $96.7500
  • 5 $96.0400
  • 10 $95.0900
  • 20 $93.6100
$93.6100 / $98.2900 Buy Now
Future Electronics JANTX Series 200 V 105 mOhm 27.4 A Flange Mount Power Mosfet - TO-254AA RoHS: Not Compliant pbFree: No Min Qty: 50 Package Multiple: 1 Container: Tray 0
Tray
  • 1 $98.2900
  • 3 $96.7500
  • 5 $96.0400
  • 10 $95.0900
  • 20 $93.6100
$93.6100 / $98.2900 Buy Now
DISTI # C1S322002832749
Chip1Stop MOSFET RoHS: Not Compliant 26968
  • 1 $95.4730
$95.4730 Buy Now

Part Details for JANTX2N7225

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JANTX2N7225 Part Data Attributes

JANTX2N7225 Infineon Technologies AG
Buy Now Datasheet
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JANTX2N7225 Infineon Technologies AG Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TO-254AA, 3 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 27.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-MSFM-P3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material METAL
Package Shape SQUARE
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Qualified
Reference Standard MIL-19500/592
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTX2N7225

This table gives cross-reference parts and alternative options found for JANTX2N7225. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N7225, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM250 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTX2N7225 vs IRFM250
2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANTX2N7225 vs 2N7225
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANTX2N7225 vs JANTXV2N7225
IRFM250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Resistors JANTX2N7225 vs IRFM250
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Semicoa Semiconductors JANTX2N7225 vs JANTXV2N7225
IRFM250 Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Temic Semiconductors JANTX2N7225 vs IRFM250
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Omnirel Corp JANTX2N7225 vs JANTXV2N7225
2N7225R1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Resistors JANTX2N7225 vs 2N7225R1
JANTXV2N7225 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Intersil Corporation JANTX2N7225 vs JANTXV2N7225
JANTX2N7225 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Intersil Corporation JANTX2N7225 vs JANTX2N7225
Part Number Description Manufacturer Compare
IRFM250UPBF Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANTX2N7225 vs IRFM250UPBF
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANTX2N7225 vs JANTXV2N7225
IRFM250-JQR-BR1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANTX2N7225 vs IRFM250-JQR-BR1
2N7225DPBF 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Infineon Technologies AG JANTX2N7225 vs 2N7225DPBF
JAN2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Microsemi Corporation JANTX2N7225 vs JAN2N7225
JANTXV2N7225U Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3 Microsemi Corporation JANTX2N7225 vs JANTXV2N7225U
SHD2183AS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Sensitron Semiconductors JANTX2N7225 vs SHD2183AS
IRFM250D Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANTX2N7225 vs IRFM250D
SHD2183BS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Sensitron Semiconductors JANTX2N7225 vs SHD2183BS
2N7225TXV Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANTX2N7225 vs 2N7225TXV

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