Datasheets
JANTXV2N7225 by:

Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

Part Details for JANTXV2N7225 by Semicoa Semiconductors

Overview of JANTXV2N7225 by Semicoa Semiconductors

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Applications Industrial Automation

Part Details for JANTXV2N7225

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JANTXV2N7225 Part Data Attributes

JANTXV2N7225 Semicoa Semiconductors
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JANTXV2N7225 Semicoa Semiconductors Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer SEMICOA CORP
Package Description HERMETIC SEALED PACKAGE-3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 27.4 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-254AA
JESD-30 Code S-XSFM-P3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material UNSPECIFIED
Package Shape SQUARE
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Reference Standard MIL-19500
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTXV2N7225

This table gives cross-reference parts and alternative options found for JANTXV2N7225. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTXV2N7225, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFM250 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JANTXV2N7225 vs IRFM250
2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANTXV2N7225 vs 2N7225
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANTXV2N7225 vs JANTXV2N7225
IRFM250 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Resistors JANTXV2N7225 vs IRFM250
IRFM250 Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 Temic Semiconductors JANTXV2N7225 vs IRFM250
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Omnirel Corp JANTXV2N7225 vs JANTXV2N7225
2N7225R1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, METAL, ISOLATED TO-254AA, 3 PIN TT Electronics Resistors JANTXV2N7225 vs 2N7225R1
JANTX2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANTXV2N7225 vs JANTX2N7225
JANTXV2N7225 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Intersil Corporation JANTXV2N7225 vs JANTXV2N7225
JANTX2N7225 27.4A, 200V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Intersil Corporation JANTXV2N7225 vs JANTX2N7225
Part Number Description Manufacturer Compare
IRFM250UPBF Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANTXV2N7225 vs IRFM250UPBF
JANTXV2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN Infineon Technologies AG JANTXV2N7225 vs JANTXV2N7225
IRFM250-JQR-BR1 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JANTXV2N7225 vs IRFM250-JQR-BR1
2N7225DPBF 27.4A, 200V, 0.105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA Infineon Technologies AG JANTXV2N7225 vs 2N7225DPBF
JAN2N7225 Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Microsemi Corporation JANTXV2N7225 vs JAN2N7225
JANTXV2N7225U Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, U3, U PKG-3 Microsemi Corporation JANTXV2N7225 vs JANTXV2N7225U
SHD2183AS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Sensitron Semiconductors JANTXV2N7225 vs SHD2183AS
IRFM250D Power Field-Effect Transistor, 27.4A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PIN International Rectifier JANTXV2N7225 vs IRFM250D
SHD2183BS Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Sensitron Semiconductors JANTXV2N7225 vs SHD2183BS
2N7225TXV Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA International Rectifier JANTXV2N7225 vs 2N7225TXV

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