JANTX2N6766 by:

Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN

Part Details for JANTX2N6766 by Defense Logistics Agency

Overview of JANTX2N6766 by Defense Logistics Agency

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Applications Telecommunications

Part Details for JANTX2N6766

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JANTX2N6766 Part Data Attributes

JANTX2N6766 Defense Logistics Agency
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JANTX2N6766 Defense Logistics Agency Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
Part Life Cycle Code Active
Ihs Manufacturer DEFENSE LOGISTICS AGENCY
Package Description TO-204AE, 2 PIN
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature RADIATION HARDENED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.085 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AE
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 60 A
Qualification Status Qualified
Reference Standard MILITARY STANDARD (USA)
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANTX2N6766

This table gives cross-reference parts and alternative options found for JANTX2N6766. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANTX2N6766, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JAN2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN Defense Logistics Agency JANTX2N6766 vs JAN2N6766
Part Number Description Manufacturer Compare
JANTXV2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN Defense Logistics Agency JANTX2N6766 vs JANTXV2N6766
IRF250 30A, 200V, 0.09ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC JANTX2N6766 vs IRF250
IRF250 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier JANTX2N6766 vs IRF250
JANHCA2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 International Rectifier JANTX2N6766 vs JANHCA2N6766
2N6765 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE Rochester Electronics LLC JANTX2N6766 vs 2N6765
IRF251 Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier JANTX2N6766 vs IRF251
JAN2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN Defense Logistics Agency JANTX2N6766 vs JAN2N6766
IRF253 Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN International Rectifier JANTX2N6766 vs IRF253
2N6766 Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN International Rectifier JANTX2N6766 vs 2N6766
IRF250PBF Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN International Rectifier JANTX2N6766 vs IRF250PBF

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