Part Details for IRF253 by International Rectifier
Overview of IRF253 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF253
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | 25A, 150V, 0.12ohm, N-Channel Power MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 19 |
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$1.8700 / $2.2000 | Buy Now |
Part Details for IRF253
IRF253 CAD Models
IRF253 Part Data Attributes
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IRF253
International Rectifier
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Datasheet
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IRF253
International Rectifier
Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-204AE, 2 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-240AE | |
| Package Description | TO-204AE, 2 PIN | |
| Pin Count | 2 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 25 A | |
| Drain-source On Resistance-Max | 0.12 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF253
This table gives cross-reference parts and alternative options found for IRF253. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF253, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF253 | Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | IRF253 vs IRF253 |
| 2N6765 | Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | IRF253 vs 2N6765 |
| IRF253 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Littelfuse Inc | IRF253 vs IRF253 |
| 2N6765 | Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | IRF253 vs 2N6765 |
| 2N6765R1 | 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF253 vs 2N6765R1 |
| 2N6765 | 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | IRF253 vs 2N6765 |
| UFN253 | Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | IRF253 vs UFN253 |
| 2N6765 | Power Field-Effect Transistor, 25A I(D), 150V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | IRF253 vs 2N6765 |
| IRF253 | 25A, 150V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | IRF253 vs IRF253 |
| IRF250 | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN | International Rectifier | IRF253 vs IRF250 |