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Transistors / Power Field-Effect Transistors / IRFR5305TRLPBF
Datasheets
IRFR5305TRLPBF by:

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Part Details for IRFR5305TRLPBF by Infineon Technologies AG

Overview of IRFR5305TRLPBF by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for IRFR5305TRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR5305TRLPBFCT-ND
DigiKey MOSFET P-CH 55V 31A DPAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 39819
In Stock
  • 1 $0.9200
  • 10 $0.7510
  • 100 $0.5845
  • 500 $0.4954
  • 1,000 $0.4900
  • 3,000 $0.4900
$0.4900 / $0.9200 Buy Now
DISTI # 942-IRFR5305TRLPBF
Mouser Electronics MOSFET MOSFT PCh -55V -28A 65mOhm 42nC RoHS: Compliant 18656
  • 1 $1.2800
  • 10 $1.0400
  • 100 $0.8210
  • 500 $0.6350
  • 1,000 $0.5400
  • 3,000 $0.5110
  • 6,000 $0.5070
  • 9,000 $0.4900
$0.4900 / $1.2800 Buy Now
DISTI # V36:1790_13891661
Arrow Electronics Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks Date Code: 2324 Americas - 3000
  • 3,000 $0.4434
$0.4434 Buy Now
DISTI # E32:1076_00175699
Arrow Electronics Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK T/R Min Qty: 500 Package Multiple: 500 Lead time: 10 Weeks Date Code: 2329 Europe - 1000
  • 500 $0.5234
  • 1,000 $0.4630
  • 3,000 $0.2506
$0.2506 / $0.5234 Buy Now
DISTI # V72:2272_13891661
Arrow Electronics Trans MOSFET P-CH Si 55V 31A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks Date Code: 2228 Container: Cut Strips Americas - 697
  • 1 $1.1330
  • 10 $0.9489
  • 25 $0.9236
  • 100 $0.7707
  • 250 $0.7550
  • 500 $0.4810
$0.4810 / $1.1330 Buy Now
Future Electronics Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 315000
Reel
  • 3,000 $0.2550
  • 6,000 $0.2450
  • 9,000 $0.2400
$0.2400 / $0.2550 Buy Now
Future Electronics Single P-Channel 55 V 0.065 Ohm 63 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5050
  • 6,000 $0.4900
  • 9,000 $0.4800
$0.4800 / $0.5050 Buy Now
DISTI # IRFR5305TRLPBF
TME Transistor: P-MOSFET, unipolar, -55V, -28A, 89W, DPAK Min Qty: 1 0
  • 1 $0.7610
  • 5 $0.5140
  • 25 $0.4540
  • 100 $0.4080
  • 500 $0.3810
$0.3810 / $0.7610 RFQ

Part Details for IRFR5305TRLPBF

IRFR5305TRLPBF CAD Models

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IRFR5305TRLPBF Part Data Attributes:

Parametric Data
IRFR5305TRLPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFR5305TRLPBF Infineon Technologies AG Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Rating (Eas) 280 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 31 A
Drain-source On Resistance-Max 0.065 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 110 W
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR5305TRLPBF

This table gives cross-reference parts and alternative options found for IRFR5305TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR5305TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305
IRFR5305TRLPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305TRLPBF
IRFR5305TRR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305TRR
IRFR5305TRRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305TRRPBF
IRFR5305HR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 Infineon Technologies AG IRFR5305TRLPBF vs IRFR5305HR
IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305PBF
IRFR5305TRL Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305TRL
IRFR5305 Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG IRFR5305TRLPBF vs IRFR5305
AUIRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG IRFR5305TRLPBF vs AUIRFR5305TR
AUIRFR5305TRL Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2 Infineon Technologies AG IRFR5305TRLPBF vs AUIRFR5305TRL
Part Number Description Manufacturer Compare
IRFR5305TRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG IRFR5305TRLPBF vs IRFR5305TRPBF
IRFR5305TRLPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305TRLPBF
2SJ402(TO-220SM) TRANSISTOR 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRFR5305TRLPBF vs 2SJ402(TO-220SM)
IRF5305SHR Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier IRFR5305TRLPBF vs IRF5305SHR
IRFR5305TRL Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305TRL
IRFR5305HR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 Infineon Technologies AG IRFR5305TRLPBF vs IRFR5305HR
FQB27P06TM Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, D2PAK, 800-REEL onsemi IRFR5305TRLPBF vs FQB27P06TM
FQB27P06 Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRFR5305TRLPBF vs FQB27P06
IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR5305TRLPBF vs IRFR5305PBF
AUIRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG IRFR5305TRLPBF vs AUIRFR5305TR

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