Datasheets
FQB27P06 by:

Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3

Part Details for FQB27P06 by Fairchild Semiconductor Corporation

Overview of FQB27P06 by Fairchild Semiconductor Corporation

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Part Details for FQB27P06

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FQB27P06 Part Data Attributes:

FQB27P06 Fairchild Semiconductor Corporation
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FQB27P06 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature FAST SWITCHING, AVALANCHE RATED
Avalanche Energy Rating (Eas) 560 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 27 A
Drain-source On Resistance-Max 0.07 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 120 W
Pulsed Drain Current-Max (IDM) 108 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQB27P06

This table gives cross-reference parts and alternative options found for FQB27P06. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQB27P06, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQB27P06TM Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, D2PAK, 800-REEL onsemi FQB27P06 vs FQB27P06TM
FQB27P06TM Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation FQB27P06 vs FQB27P06TM
Part Number Description Manufacturer Compare
IRFR5305TRPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG FQB27P06 vs IRFR5305TRPBF
IRFR5305TRLPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier FQB27P06 vs IRFR5305TRLPBF
2SJ402(TO-220SM) TRANSISTOR 30 A, 60 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET, 2-10S2B, TO-220SM, 3 PIN, FET General Purpose Power Toshiba America Electronic Components FQB27P06 vs 2SJ402(TO-220SM)
IRFR5305TRLPBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG FQB27P06 vs IRFR5305TRLPBF
IRF5305SHR Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 International Rectifier FQB27P06 vs IRF5305SHR
IRFR5305TRL Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier FQB27P06 vs IRFR5305TRL
IRFR5305HR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3/2 Infineon Technologies AG FQB27P06 vs IRFR5305HR
FQB27P06TM Power MOSFET, P-Channel, QFET®, -60 V, -27 A, 70 mΩ, D2PAK, 800-REEL onsemi FQB27P06 vs FQB27P06TM
IRFR5305PBF Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier FQB27P06 vs IRFR5305PBF
AUIRFR5305TR Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Infineon Technologies AG FQB27P06 vs AUIRFR5305TR

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