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Transistors Power Field-Effect Transistors IRFR1N60ATRLPBF

Transistors
IRFR1N60ATRLPBF
Description: Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

Overview of IRFR1N60ATRLPBF by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR1N60ATRLPBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRFR1N60ATRLPBFCT-ND
DigiKey MOSFET N-CH 600V 1.4A DPAK Min Qty: 1 Lead time: 14 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 99
In Stock
  • 1 $1.4900
  • 10 $1.2370
  • 3,000 $0.6716
  • 6,000 $0.6464
  • 9,000 $0.6250
$0.6250 / $1.4900 Buy Now

CAD Models for IRFR1N60ATRLPBF by Vishay Siliconix
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Part Data Attributes for IRFR1N60ATRLPBF by Vishay Siliconix
Parametric Data

IRFR1N60ATRLPBF
Vishay Siliconix
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-252
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
93 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
1.4 A
Drain-source On Resistance-Max
7 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
5.6 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR1N60ATRLPBF
    Vishay Siliconix
    Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
    VS

Alternate Parts for IRFR1N60ATRLPBF

This table gives cross-reference parts and alternative options found for IRFR1N60ATRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1N60ATRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR1N60ATRLPBF vs IRFR1N60APBF
IRFR1N60ATRL Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60ATRL
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60A
SIHFR1N60ATR-GE3 Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, Vishay Intertechnologies IRFR1N60ATRLPBF vs SIHFR1N60ATR-GE3
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60ATR
IRFR1N60ATRPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR1N60ATRLPBF vs IRFR1N60ATRPBF
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR1N60ATRLPBF vs IRFR1N60A
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR1N60ATRLPBF vs IRFR1N60ATR
IRFR1N60ATRLPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60ATRLPBF
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR1N60ATRLPBF vs IRFR1N60ATR
Part Number Description Manufacturer Compare
IRFR1N60ATRLPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60ATRLPBF
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR1N60ATRLPBF vs IRFR1N60APBF
IRFR1N60ATRPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR1N60ATRLPBF vs IRFR1N60ATRPBF
SIHFR1N60A-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR1N60ATRLPBF vs SIHFR1N60A-GE3
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60APBF
SIHFR1N60ATR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR1N60ATRLPBF vs SIHFR1N60ATR-GE3
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60A
IRFR1N60ATRPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60ATRPBF
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRLPBF vs IRFR1N60ATR
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR1N60ATRLPBF vs IRFR1N60ATR

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