Transistors
IRFR1N60ATRPBF
Description: Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3

Overview of IRFR1N60ATRPBF by Vishay Intertechnologies

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR1N60ATRPBF by Vishay Intertechnologies

Part # Manufacturer Description Stock Price Buy
DISTI # 96AC0296
Newark Mosfet N-Channel 600V Rohs Compliant: No |Vishay IRFR1N60ATRPBF RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 28000
  • 1 $0.5930
$0.5930 Buy Now
DISTI # 56AJ9892
Newark Mosfet, N-Ch, 600V, 1.4A, To-252 Rohs Compliant: Yes |Vishay IRFR1N60ATRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 829
  • 1 $1.5500
  • 10 $1.3000
  • 25 $1.2100
  • 50 $1.1300
  • 100 $1.0400
$1.0400 / $1.5500 Buy Now
DISTI # 63J6909
Newark N Channel Mosfet, 600V, 1.4A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:1.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:36W Rohs Compliant: Yes |Vishay IRFR1N60ATRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,000 $0.7650
  • 4,000 $0.6900
  • 6,000 $0.6650
  • 10,000 $0.6400
$0.6400 / $0.7650 Buy Now
DISTI # 05W6851
Newark Mosfet, N Channel, 600V, 1.4A, To-252-3, Transistor Polarity:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:1.4A, On Resistance Rds(On):7Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Vishay IRFR1N60ATRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.9800
$0.9800 Buy Now
DISTI # IRFR1N60ATRPBF
Avnet Americas MOSFET N-CHANNEL 600V - Tape and Reel (Alt: IRFR1N60ATRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days Container: Reel 28000
  • 2,000 $0.5925
$0.5925 Buy Now
DISTI # IRFR1N60ATRPBF
Avnet Americas MOSFET N-CHANNEL 600V - Tape and Reel (Alt: IRFR1N60ATRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 844-IRFR1N60ATRPBF
Mouser Electronics MOSFETs N-Chan 600V 1.4 Amp RoHS: Compliant 2795
  • 1 $1.4900
  • 10 $1.2400
  • 100 $0.9850
  • 500 $0.8330
  • 1,000 $0.6810
  • 2,000 $0.6240
  • 4,000 $0.6090
  • 10,000 $0.5810
$0.5810 / $1.4900 Buy Now
DISTI # E02:0323_00192971
Arrow Electronics Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Date Code: 2421 Europe - 2000
  • 2,000 $0.5369
  • 4,000 $0.5316
  • 6,000 $0.5263
  • 10,000 $0.5210
$0.5210 / $0.5369 Buy Now
Future Electronics Single N-Channel 600 V 7 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $0.5550
  • 4,000 $0.5400
  • 6,000 $0.5350
  • 8,000 $0.5250
$0.5250 / $0.5550 Buy Now
Future Electronics Single N-Channel 600 V 7 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel 0
Reel
  • 2,000 $0.5550
  • 4,000 $0.5400
  • 6,000 $0.5350
  • 8,000 $0.5250
$0.5250 / $0.5550 Buy Now
DISTI # 83150804
Verical Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2421 Americas - 2000
  • 2,000 $0.5373
  • 4,000 $0.5320
  • 6,000 $0.5267
  • 10,000 $0.5213
$0.5213 / $0.5373 Buy Now
Quest Components   2800
  • 1 $2.3180
  • 864 $0.8113
  • 1,850 $0.6954
$0.6954 / $2.3180 Buy Now
DISTI # IRFR1N60ATRPBF
TTI MOSFETs N-Chan 600V 1.4 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 2000 Package Multiple: 2000 Container: Reel Americas - 4000
In Stock
  • 2,000 $0.5910
$0.5910 Buy Now
DISTI # C1S803600887570
Chip1Stop Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant pbFree: Yes 2000
  • 2,000 $0.3350
$0.3350 Buy Now
DISTI # IRFR1N60ATRPBF
EBV Elektronik Trans MOSFET N-CH 600V 1.4A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR1N60ATRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 600V 1.4A 7840mA10V 36W 4V250uA 1 N-Channel DPAK MOSFETs ROHS 15
  • 1 $0.8393
  • 10 $0.8174
  • 30 $0.8033
  • 100 $0.7877
$0.7877 / $0.8393 Buy Now

CAD Models for IRFR1N60ATRPBF by Vishay Intertechnologies
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Part Data Attributes for IRFR1N60ATRPBF by Vishay Intertechnologies

IRFR1N60ATRPBF
Vishay Intertechnologies
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
VISHAY INTERTECHNOLOGY INC
Part Package Code
TO-252AA
Package Description
SMALL OUTLINE, R-PSSO-G2
Pin Count
3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Factory Lead Time
12 Weeks
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
93 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
1.4 A
Drain-source On Resistance-Max
7 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
36 W
Pulsed Drain Current-Max (IDM)
5.6 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR1N60ATRPBF
    Vishay Intertechnologies
    Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
    VS

Alternate Parts for IRFR1N60ATRPBF

This table gives cross-reference parts and alternative options found for IRFR1N60ATRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1N60ATRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
SIHFR1N60ATR-GE3 Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, Vishay Intertechnologies IRFR1N60ATRPBF vs SIHFR1N60ATR-GE3
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR1N60ATRPBF vs IRFR1N60A
SIHFR1N60ATR-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR1N60ATRPBF vs SIHFR1N60ATR-GE3
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60A
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR1N60ATRPBF vs IRFR1N60A
IRFR1N60ATRPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR1N60ATRPBF vs IRFR1N60ATRPBF
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR1N60ATRPBF vs IRFR1N60APBF
IRFR1N60ATRLPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60ATRLPBF
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60APBF
SIHFR1N60A-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR1N60ATRPBF vs SIHFR1N60A-GE3
Part Number Description Manufacturer Compare
IRFR1N60ATR Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60ATR
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR1N60ATRPBF vs IRFR1N60A
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60APBF
SIHFR1N60A-GE3 TRANSISTOR POWER, FET, FET General Purpose Power Vishay Siliconix IRFR1N60ATRPBF vs SIHFR1N60A-GE3
IRFR1N60ATRLPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60ATRLPBF
SIHFR1N60ATR-GE3 Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET, Vishay Intertechnologies IRFR1N60ATRPBF vs SIHFR1N60ATR-GE3
IRFR1N60ATRLPBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR1N60ATRPBF vs IRFR1N60ATRLPBF
IRFR1N60ATRL Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60ATRL
IRFR1N60APBF Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR1N60ATRPBF vs IRFR1N60APBF
IRFR1N60A Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR1N60ATRPBF vs IRFR1N60A

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