| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
56AJ9894
|
Newark | Mosfet, N-Ch, 100V, 7.7A, To-252 Rohs Compliant: Yes |Vishay IRFR120TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 794 |
|
$0.8890 / $1.3700 | Buy Now | |
|
DISTI #
41K2180
|
Newark | N Channel Mosfet, 100V, 7.7A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:7.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:2.5W Rohs Compliant: Yes |Vishay IRFR120TRPBF RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6100 / $0.7190 | Buy Now | |
|
DISTI #
844-IRFR120TRPBF
|
Mouser Electronics | MOSFETs TO252 100V 7.7A N-CH MOSFET RoHS: Compliant | 2856 |
|
$0.5580 / $1.3700 | Buy Now | |
|
DISTI #
V36:1790_09218285
|
Arrow Electronics | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Date Code: 2421 | Americas - 18000 |
|
$0.5562 / $0.5798 | Buy Now | |
|
DISTI #
E02:0323_00192831
|
Arrow Electronics | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 13 Weeks Date Code: 2433 | Europe - 6000 |
|
$0.4530 / $0.4703 | Buy Now | |
|
DISTI #
V72:2272_09218285
|
Arrow Electronics | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 13 Weeks Date Code: 2229 Container: Cut Strips | Americas - 428 |
|
$0.5856 / $0.7211 | Buy Now | |
| Future Electronics | Single N-Channel 100 V 0.27 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 6000Reel |
|
$0.5500 / $0.5850 | Buy Now | ||
| Future Electronics | Single N-Channel 100 V 0.27 Ohms Surface Mount Power Mosfet - TO-252 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 4000Reel |
|
$0.5500 / $0.5850 | Buy Now | ||
|
DISTI #
83589933
|
Verical | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2421 | Americas - 18000 |
|
$0.4961 | Buy Now | |
|
DISTI #
84439591
|
Verical | Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2433 | Americas - 6000 |
|
$0.3780 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
VISHAY INTERTECHNOLOGY INC
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
12 Weeks
|
|
Samacsys Manufacturer
|
Vishay
|
|
Additional Feature
|
AVALANCHE RATED
|
|
Avalanche Energy Rating (Eas)
|
210 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
100 V
|
|
Drain Current-Max (ID)
|
7.7 A
|
|
Drain-source On Resistance-Max
|
0.27 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
34 pF
|
|
JEDEC-95 Code
|
TO-252AA
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
42 W
|
|
Pulsed Drain Current-Max (IDM)
|
31 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn)
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
10
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHFR120-GE3 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120TRPBF vs SIHFR120-GE3 |
| SIHFR120TR-GE3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR120TRPBF vs SIHFR120TR-GE3 |
| SIHFR120TRL-GE3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR120TRPBF vs SIHFR120TRL-GE3 |
| IRFR120T_R4941 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | IRFR120TRPBF vs IRFR120T_R4941 |
| IRFR120TRLPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120TRPBF vs IRFR120TRLPBF |
| IRFR120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR120TRPBF vs IRFR120 |
| IRFR120TRRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR120TRPBF vs IRFR120TRRPBF |
| IRFR120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR120TRPBF vs IRFR120 |
| SIHFR120-GE3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR120TRPBF vs SIHFR120-GE3 |
| IRFR120T | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | IRFR120TRPBF vs IRFR120T |