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Part Details for SIHFR120-GE3 by Vishay Intertechnologies
Overview of SIHFR120-GE3 by Vishay Intertechnologies
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for SIHFR120-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
42AJ0400
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Newark | Mosfet N-Channel 100V |Vishay SIHFR120-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.2440 | Buy Now |
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DISTI #
SIHFR120-GE3
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Avnet Americas | Transistor MOSFET N-CH 100V 7.7A 2-Pin DPAK (Alt: SIHFR120-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
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$0.2403 / $0.3053 | Buy Now |
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DISTI #
78-SIHFR120-GE3
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Mouser Electronics | MOSFET 100V N-CH RoHS: Compliant | 12369 |
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$0.2310 / $0.6700 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 | 0 |
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$0.2380 | Buy Now |
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DISTI #
SIHFR120-GE3
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TTI | MOSFET 100V N-CH RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Tube | Americas - 0 |
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Buy Now | |
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DISTI #
SIHFR120-GE3
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Avnet Americas | Transistor MOSFET N-CH 100V 7.7A 2-Pin DPAK (Alt: SIHFR120-GE3) RoHS: Not Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days | 0 |
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$0.2403 / $0.3053 | Buy Now |
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DISTI #
SIHFR120-GE3
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TME | Transistor: N-MOSFET, unipolar, 100V, 4.9A, Idm: 31A, 42W Min Qty: 1 | 0 |
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$0.3870 / $0.7730 | RFQ |
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Chip 1 Exchange | INSTOCK | 1024 |
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RFQ |
Part Details for SIHFR120-GE3
SIHFR120-GE3 CAD Models
SIHFR120-GE3 Part Data Attributes:
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SIHFR120-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SIHFR120-GE3
Vishay Intertechnologies
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 34 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 31 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHFR120-GE3
This table gives cross-reference parts and alternative options found for SIHFR120-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR120-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR120PBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | SIHFR120-GE3 vs IRFR120PBF |
| IRFR120TRLPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHFR120-GE3 vs IRFR120TRLPBF |
| IRFR120TRRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHFR120-GE3 vs IRFR120TRRPBF |
| IRFR120TRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHFR120-GE3 vs IRFR120TRPBF |