Part Details for SIHFR120TR-GE3 by Vishay Siliconix
Overview of SIHFR120TR-GE3 by Vishay Siliconix
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Part Details for SIHFR120TR-GE3
SIHFR120TR-GE3 CAD Models
SIHFR120TR-GE3 Part Data Attributes:
|
|
SIHFR120TR-GE3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SIHFR120TR-GE3
Vishay Siliconix
TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power
|
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-252AA | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 7.7 A | |
| Drain-source On Resistance-Max | 0.27 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 34 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 42 W | |
| Pulsed Drain Current-Max (IDM) | 31 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SIHFR120TR-GE3
This table gives cross-reference parts and alternative options found for SIHFR120TR-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SIHFR120TR-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | SIHFR120TR-GE3 vs IRFR120 |
| IRFR120 | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | SIHFR120TR-GE3 vs IRFR120 |
| IRFR120TRRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHFR120TR-GE3 vs IRFR120TRRPBF |
| IRFR120T | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | SIHFR120TR-GE3 vs IRFR120T |
| IRFR120-T1 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | SIHFR120TR-GE3 vs IRFR120-T1 |
| IRFR120 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | SIHFR120TR-GE3 vs IRFR120 |
| IRFR120TRPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHFR120TR-GE3 vs IRFR120TRPBF |
| SIHFR120-GE3 | TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power | Vishay Siliconix | SIHFR120TR-GE3 vs SIHFR120-GE3 |
| IRFR120TRLPBF | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | SIHFR120TR-GE3 vs IRFR120TRLPBF |
| IRFR120_R4941 | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | SIHFR120TR-GE3 vs IRFR120_R4941 |