Datasheets
IRFR120TRLPBF by:

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Part Details for IRFR120TRLPBF by Vishay Intertechnologies

Overview of IRFR120TRLPBF by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR120TRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR120TRLPBF
Avnet Americas Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR120TRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 24000
  • 3,000 $0.5427
$0.5427 Buy Now
DISTI # 844-IRFR120TRLPBF
Mouser Electronics MOSFET N-Chan 100V 7.7 Amp RoHS: Compliant 6651
  • 1 $1.3300
  • 10 $1.1000
  • 100 $0.8690
  • 500 $0.7510
  • 1,000 $0.6550
$0.6550 / $1.3300 Buy Now
Future Electronics IRFR120 Series N-Channel 100 V 270 mOhm 2.5 W Power Mosfet - DPAK (TO-252) RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5500
  • 6,000 $0.5350
$0.5350 / $0.5500 Buy Now
Future Electronics IRFR120 Series N-Channel 100 V 270 mOhm 2.5 W Power Mosfet - DPAK (TO-252) RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.5500
  • 6,000 $0.5350
$0.5350 / $0.5500 Buy Now
DISTI # IRFR120TRLPBF
TTI MOSFET N-Chan 100V 7.7 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.5560
  • 6,000 $0.5450
  • 9,000 $0.5340
$0.5340 / $0.5560 Buy Now
DISTI # IRFR120TRLPBF
EBV Elektronik Trans MOSFET N-CH 100V 7.7A 3-Pin(2+Tab) DPAK T/R (Alt: IRFR120TRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for IRFR120TRLPBF

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IRFR120TRLPBF Part Data Attributes:

IRFR120TRLPBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFR120TRLPBF Vishay Intertechnologies Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 7.7 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 34 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 42 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR120TRLPBF

This table gives cross-reference parts and alternative options found for IRFR120TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR120TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR120T_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120T_R4941
IRFR120_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120_R4941
SIHFR120-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRLPBF vs SIHFR120-GE3
IRFR120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR120TRLPBF vs IRFR120
SIHFR120-GE3 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRLPBF vs SIHFR120-GE3
IRFR120 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR120TRLPBF vs IRFR120
IRFR120PBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR120TRLPBF vs IRFR120PBF
SIHFR120TR-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRLPBF vs SIHFR120TR-GE3
IRFR120T Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120T
IRFR120TRRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRLPBF vs IRFR120TRRPBF
Part Number Description Manufacturer Compare
IRFR120_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120_R4941
IRFR120TRRPBF Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRLPBF vs IRFR120TRRPBF
IRFR120ATM Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120ATM
IRFR120ATF Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120ATF
SIHFR120-GE3 TRANSISTOR 7.7 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR120TRLPBF vs SIHFR120-GE3
IRFR120A Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120A
IRFR120A Power Field-Effect Transistor, 8.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR120TRLPBF vs IRFR120A
IRFR120 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR120TRLPBF vs IRFR120
IRFR120T_R4941 Power Field-Effect Transistor, 8.4A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation IRFR120TRLPBF vs IRFR120T_R4941
SIHFR120-GE3 Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR120TRLPBF vs SIHFR120-GE3

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