Datasheets
IRFP350LCPBF by:

Power Field-Effect Transistor, 18A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRFP350LCPBF by International Rectifier

Overview of IRFP350LCPBF by International Rectifier

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFP350LCPBF

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IRFP350LCPBF Part Data Attributes:

IRFP350LCPBF International Rectifier
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IRFP350LCPBF International Rectifier Power Field-Effect Transistor, 18A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 190 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP350LCPBF

This table gives cross-reference parts and alternative options found for IRFP350LCPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350LCPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTW16N40E 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE Motorola Mobility LLC IRFP350LCPBF vs MTW16N40E
MTW16N40E 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN Rochester Electronics LLC IRFP350LCPBF vs MTW16N40E
BUZ382 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Siemens IRFP350LCPBF vs BUZ382
BUZ323 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens IRFP350LCPBF vs BUZ323
BUZ323 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA Rochester Electronics LLC IRFP350LCPBF vs BUZ323
IRFP350 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix IRFP350LCPBF vs IRFP350
SSH22N35 Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP350LCPBF vs SSH22N35
IRFP341 Power Field-Effect Transistor, 11A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350LCPBF vs IRFP341
BUZ325 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Infineon Technologies AG IRFP350LCPBF vs BUZ325
IRFP341 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP350LCPBF vs IRFP341
Part Number Description Manufacturer Compare
IRFP353 Power Field-Effect Transistor, 13A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP350LCPBF vs IRFP353
BUZ323 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA Rochester Electronics LLC IRFP350LCPBF vs BUZ323
IRFP353 Power Field-Effect Transistor, 14A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350LCPBF vs IRFP353
IRFP341 Power Field-Effect Transistor, 11A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350LCPBF vs IRFP341
BUZ325 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Infineon Technologies AG IRFP350LCPBF vs BUZ325
IRFP350 Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350LCPBF vs IRFP350
IRFP350 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Intersil Corporation IRFP350LCPBF vs IRFP350
IRFP350 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix IRFP350LCPBF vs IRFP350
BUZ382 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Siemens IRFP350LCPBF vs BUZ382
STW18NB40 18.4A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics IRFP350LCPBF vs STW18NB40

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