Part Details for IRFP341 by Samsung Semiconductor
Overview of IRFP341 by Samsung Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFP341
IRFP341 CAD Models
IRFP341 Part Data Attributes:
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IRFP341
Samsung Semiconductor
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Datasheet
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IRFP341
Samsung Semiconductor
Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | SAMSUNG SEMICONDUCTOR INC | |
| Part Package Code | TO-3P | |
| Package Description | TO-3P, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 520 mJ | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.55 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 125 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 111 ns | |
| Turn-on Time-Max (ton) | 62 ns |
Alternate Parts for IRFP341
This table gives cross-reference parts and alternative options found for IRFP341. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP341, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTW16N40E | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | IRFP341 vs MTW16N40E |
| MTW16N40E | 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | Rochester Electronics LLC | IRFP341 vs MTW16N40E |
| BUZ382 | Power Field-Effect Transistor, 12.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Siemens | IRFP341 vs BUZ382 |
| BUZ323 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | IRFP341 vs BUZ323 |
| BUZ323 | 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA | Rochester Electronics LLC | IRFP341 vs BUZ323 |
| IRFP350 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | IRFP341 vs IRFP350 |
| SSH22N35 | Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP341 vs SSH22N35 |
| IRFP341 | Power Field-Effect Transistor, 11A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP341 vs IRFP341 |
| BUZ325 | Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Infineon Technologies AG | IRFP341 vs BUZ325 |
| IRFP350 | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | IRFP341 vs IRFP350 |