Datasheets
IRFP350 by:

16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

Part Details for IRFP350 by Intersil Corporation

Overview of IRFP350 by Intersil Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFP350

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IRFP350 Part Data Attributes:

IRFP350 Intersil Corporation
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IRFP350 Intersil Corporation 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 700 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180 W
Pulsed Drain Current-Max (IDM) 64 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP350

This table gives cross-reference parts and alternative options found for IRFP350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTW16N40E 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE Motorola Mobility LLC IRFP350 vs MTW16N40E
MTW16N40E 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN Rochester Electronics LLC IRFP350 vs MTW16N40E
BUZ382 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Siemens IRFP350 vs BUZ382
BUZ323 Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens IRFP350 vs BUZ323
BUZ323 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA Rochester Electronics LLC IRFP350 vs BUZ323
IRFP350 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix IRFP350 vs IRFP350
SSH22N35 Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP350 vs SSH22N35
IRFP341 Power Field-Effect Transistor, 11A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350 vs IRFP341
BUZ325 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Infineon Technologies AG IRFP350 vs BUZ325
IRFP341 Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP350 vs IRFP341
Part Number Description Manufacturer Compare
IRFP353 Power Field-Effect Transistor, 13A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP350 vs IRFP353
BUZ323 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA Rochester Electronics LLC IRFP350 vs BUZ323
IRFP353 Power Field-Effect Transistor, 14A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350 vs IRFP353
IRFP341 Power Field-Effect Transistor, 11A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350 vs IRFP341
BUZ325 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Infineon Technologies AG IRFP350 vs BUZ325
IRFP350 Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP350 vs IRFP350
IRFP350 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Vishay Siliconix IRFP350 vs IRFP350
BUZ382 Power Field-Effect Transistor, 12.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Siemens IRFP350 vs BUZ382
STW18NB40 18.4A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN STMicroelectronics IRFP350 vs STW18NB40
MTW16N40E 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE Motorola Mobility LLC IRFP350 vs MTW16N40E

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