Part Details for IRFP350 by Vishay Siliconix
Overview of IRFP350 by Vishay Siliconix
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFP350
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 25 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-247 | 20 |
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$4.0000 / $6.0000 | Buy Now |
Part Details for IRFP350
IRFP350 CAD Models
IRFP350 Part Data Attributes:
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IRFP350
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFP350
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | SILICONIX INC | |
Part Package Code | TO-247 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 16 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 180 W | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) |
Alternate Parts for IRFP350
This table gives cross-reference parts and alternative options found for IRFP350. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP350, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTW16N40E | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | IRFP350 vs MTW16N40E |
MTW16N40E | 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | Rochester Electronics LLC | IRFP350 vs MTW16N40E |
BUZ382 | Power Field-Effect Transistor, 12.5A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Siemens | IRFP350 vs BUZ382 |
BUZ323 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | IRFP350 vs BUZ323 |
BUZ323 | 15A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AA | Rochester Electronics LLC | IRFP350 vs BUZ323 |
SSH22N35 | Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP350 vs SSH22N35 |
IRFP341 | Power Field-Effect Transistor, 11A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP350 vs IRFP341 |
BUZ325 | Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Infineon Technologies AG | IRFP350 vs BUZ325 |
IRFP341 | Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP350 vs IRFP341 |
IRFP350 | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | IRFP350 vs IRFP350 |