IRFP350
vs
BUZ323
feature comparison
All Stats
Differences Only
Rohs Code
Part Life Cycle Code
Transferred
Transferred
Ihs Manufacturer
INTERSIL CORP
SIEMENS A G
Reach Compliance Code
not_compliant
unknown
ECCN Code
EAR99
EAR99
Avalanche Energy Rating (Eas)
700 mJ
790 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
SINGLE
DS Breakdown Voltage-Min
400 V
400 V
Drain Current-Max (ID)
16 A
15 A
Drain-source On Resistance-Max
0.3 Ω
0.3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-247
TO-218
JESD-30 Code
R-PSFM-T3
R-PSFM-T3
JESD-609 Code
e0
e0
Number of Elements
1
1
Number of Terminals
3
3
Operating Mode
ENHANCEMENT MODE
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
150 °C
Package Body Material
PLASTIC/EPOXY
PLASTIC/EPOXY
Package Shape
RECTANGULAR
RECTANGULAR
Package Style
FLANGE MOUNT
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
N-CHANNEL
Power Dissipation-Max (Abs)
180 W
170 W
Pulsed Drain Current-Max (IDM)
64 A
60 A
Qualification Status
Not Qualified
Not Qualified
Surface Mount
NO
NO
Terminal Finish
Tin/Lead (Sn/Pb)
Tin/Lead (Sn/Pb)
Terminal Form
THROUGH-HOLE
THROUGH-HOLE
Terminal Position
SINGLE
SINGLE
Transistor Application
SWITCHING
SWITCHING
Transistor Element Material
SILICON
SILICON
Base Number Matches
2
1
Package Description
FLANGE MOUNT, R-PSFM-T3
HTS Code
8541.29.00.95
Feedback Cap-Max (Crss)
180 pF
Power Dissipation Ambient-Max
170 W
Turn-off Time-Max (toff)
520 ns
Turn-on Time-Max (ton)
180 ns
Compare IRFP350 with alternatives
Compare BUZ323 with alternatives