Datasheets
IRFL110TRPBF by:

Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4

Part Details for IRFL110TRPBF by Vishay Siliconix

Overview of IRFL110TRPBF by Vishay Siliconix

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Price & Stock for IRFL110TRPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFL110PBFCT-ND
DigiKey MOSFET N-CH 100V 1.5A SOT223 Min Qty: 1 Lead time: 14 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 7777
In Stock
  • 1 $0.9000
  • 10 $0.7790
  • 100 $0.5393
  • 500 $0.4506
  • 1,000 $0.3835
  • 2,500 $0.3415
  • 5,000 $0.3236
  • 12,500 $0.2996
  • 25,000 $0.2966
$0.2966 / $0.9000 Buy Now
New Advantage Corporation Single N-Channel 100 V 0.54 Ohms Surface Mount Power Mosfet - SOT-223 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 67500
  • 2,500 $0.3357
  • 67,500 $0.3133
$0.3133 / $0.3357 Buy Now

Part Details for IRFL110TRPBF

IRFL110TRPBF CAD Models

IRFL110TRPBF Part Data Attributes

IRFL110TRPBF Vishay Siliconix
Buy Now Datasheet
Compare Parts:
IRFL110TRPBF Vishay Siliconix Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-261AA
Package Description SOT-223, 3 PIN
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1.5 A
Drain-source On Resistance-Max 0.54 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1 W
Pulsed Drain Current-Max (IDM) 12 A
Qualification Status Not Qualified
Reference Standard IEC-61249-2-21
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL110TRPBF

This table gives cross-reference parts and alternative options found for IRFL110TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL110TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL110TRPBF vs IRFL110TRPBF
Part Number Description Manufacturer Compare
IRFL4310TRPBF Small Signal Field-Effect Transistor, 1.6A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL110TRPBF vs IRFL4310TRPBF
PMT200EN TRANSISTOR SMALL SIGNAL, FET, FET General Purpose Small Signal NXP Semiconductors IRFL110TRPBF vs PMT200EN
PMT200EN Small Signal Field-Effect Transistor Nexperia IRFL110TRPBF vs PMT200EN
IRLM120AL99Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL110TRPBF vs IRLM120AL99Z
PMV213SN,215 PMV213SN - N-channel TrenchMOS standard level FET@en-us TO-236 3-Pin Nexperia IRFL110TRPBF vs PMV213SN,215
BSP372NH6327 Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL110TRPBF vs BSP372NH6327
IRLM120AS62Z Power Field-Effect Transistor, 2.3A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation IRFL110TRPBF vs IRLM120AS62Z
IRFL110TRPBF Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN International Rectifier IRFL110TRPBF vs IRFL110TRPBF
IRFL110 Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, TO-261AA, 4 PIN Vishay Intertechnologies IRFL110TRPBF vs IRFL110
BSP373NH6327 Small Signal Field-Effect Transistor, 1-Element, Silicon, GREEN, PLASTIC PACKAGE-4 Infineon Technologies AG IRFL110TRPBF vs BSP373NH6327

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