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Transistors Power Field-Effect Transistors IRF640NS

IRF640NS
Description: Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3

Overview of IRF640NS by Infineon Technologies AG

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Price & Stock for IRF640NS by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   120
RFQ

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Part Data Attributes for IRF640NS by Infineon Technologies AG
Parametric Data

IRF640NS
Infineon Technologies AG
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Active
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
PLASTIC, D2PAK-2/3
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas)
247 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
18 A
Drain-source On Resistance-Max
0.15 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
225
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
72 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRF640NS
    Infineon Technologies AG
    Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3
    VS

Alternate Parts for IRF640NS

This table gives cross-reference parts and alternative options found for IRF640NS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF640NS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF640NSTRR Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-2/3 International Rectifier IRF640NS vs IRF640NSTRR
IRF640NSTRRPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 Infineon Technologies AG IRF640NS vs IRF640NSTRRPBF
IRF640NSPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 International Rectifier IRF640NS vs IRF640NSPBF
IRF640NSTRLPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 International Rectifier IRF640NS vs IRF640NSTRLPBF
IRF640NSTRRPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 International Rectifier IRF640NS vs IRF640NSTRRPBF
IRF640NS Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation IRF640NS vs IRF640NS
IRF640NSTRLPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 Infineon Technologies AG IRF640NS vs IRF640NSTRLPBF
Part Number Description Manufacturer Compare
IRF640NSPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-2/3 International Rectifier IRF640NS vs IRF640NSPBF
RFP15N15 Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Fairchild Semiconductor Corporation IRF640NS vs RFP15N15
IRF640STRRPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier IRF640NS vs IRF640STRRPBF
IRF642 16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF640NS vs IRF642
BUZ31 Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN Infineon Technologies AG IRF640NS vs BUZ31
IRF642-006 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF640NS vs IRF642-006
FQB19N20 Power Field-Effect Transistor, 19.4A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation IRF640NS vs FQB19N20
IRLW640A Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Samsung Semiconductor IRF640NS vs IRLW640A
BUZ31 Power Field-Effect Transistor, 13.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRF640NS vs BUZ31
IRFW640A Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3 Fairchild Semiconductor Corporation IRF640NS vs IRFW640A

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