Datasheets
RFP15N15 by:

Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN

Part Details for RFP15N15 by Fairchild Semiconductor Corporation

Overview of RFP15N15 by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Audio and Video Systems

Part Details for RFP15N15

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RFP15N15 Part Data Attributes:

RFP15N15 Fairchild Semiconductor Corporation
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RFP15N15 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 15A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 15 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RFP15N15

This table gives cross-reference parts and alternative options found for RFP15N15. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFP15N15, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor RFP15N15 vs IRF641
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RFP15N15 vs IRF642
BUK455-200A TRANSISTOR 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC PACKAGE-3, FET General Purpose Power NXP Semiconductors RFP15N15 vs BUK455-200A
IRF642 Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP15N15 vs IRF642
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier RFP15N15 vs IRF641
IRF641 Power Field-Effect Transistor, 18A I(D), 150V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor RFP15N15 vs IRF641
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation RFP15N15 vs IRF641
YTF642 TRANSISTOR 16 A, 200 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power Toshiba America Electronic Components RFP15N15 vs YTF642
STP19NB20 19A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics RFP15N15 vs STP19NB20
IRF641 18A, 150V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN STMicroelectronics RFP15N15 vs IRF641
Part Number Description Manufacturer Compare
2SK2534 Power Field-Effect Transistor, 16A I(D), 250V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN SANYO Electric Co Ltd RFP15N15 vs 2SK2534
MTP12N20 12A, 200V, 0.35ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP15N15 vs MTP12N20
IRF640SPBF Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 International Rectifier RFP15N15 vs IRF640SPBF
SFR9120TM Power Field-Effect Transistor, 4.9A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation RFP15N15 vs SFR9120TM
IRLW640ATM Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation RFP15N15 vs IRLW640ATM
IRF640S Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Motorola Semiconductor Products RFP15N15 vs IRF640S
STB18N20 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-2 STMicroelectronics RFP15N15 vs STB18N20
2SK1620(S)TL Power Field-Effect Transistor, 10A I(D), 150V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Hitachi Ltd RFP15N15 vs 2SK1620(S)TL
IRF640S 18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC RFP15N15 vs IRF640S
FQB19N20TM Power MOSFET, N-Channel, QFET®, 200 V, 19.4 A, 150 mΩ, D2PAK, 800-REEL onsemi RFP15N15 vs FQB19N20TM

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