There are no models available for this part yet.
Overview of IRF251 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 8 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF251 by Samsung Semiconductor
Part Data Attributes for IRF251 by Samsung Semiconductor
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|
|---|---|
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Rohs Code
|
No
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
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SAMSUNG SEMICONDUCTOR INC
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Reach Compliance Code
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unknown
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ECCN Code
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EAR99
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Configuration
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SINGLE
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Drain Current-Max (ID)
|
30 A
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-609 Code
|
e0
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Number of Elements
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1
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
|
150 W
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Surface Mount
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NO
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Terminal Finish
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Tin/Lead (Sn/Pb)
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Alternate Parts for IRF251
This table gives cross-reference parts and alternative options found for IRF251. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF251, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF251 | Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, | Vishay Siliconix | IRF251 vs IRF251 |
| UFN251 | Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corp (RETIRED) | IRF251 vs UFN251 |
| IRF251 | 30A, 150V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | IRF251 vs IRF251 |
| IRF251 | Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Motorola Semiconductor Products | IRF251 vs IRF251 |
| IRF251 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Littelfuse Inc | IRF251 vs IRF251 |
| IRF251 | Power Field-Effect Transistor, 30A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Harris Semiconductor | IRF251 vs IRF251 |
| IRF251 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Advanced Microelectronic Products Inc | IRF251 vs IRF251 |
| IRF251 | TRANSISTOR,MOSFET,N-CHANNEL,150V V(BR)DSS,30A I(D),TO-204AE | Texas Instruments | IRF251 vs IRF251 |