Part Details for 2N6766 by Harris Semiconductor
Overview of 2N6766 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Part Details for 2N6766
2N6766 CAD Models
2N6766 Part Data Attributes
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2N6766
Harris Semiconductor
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Datasheet
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2N6766
Harris Semiconductor
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | RADIATION HARDENED | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 500 pF | |
| JEDEC-95 Code | TO-204AE | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 150 W | |
| Power Dissipation-Max (Abs) | 150 W | |
| Pulsed Drain Current-Max (IDM) | 60 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 225 ns | |
| Turn-on Time-Max (ton) | 135 ns |
Alternate Parts for 2N6766
This table gives cross-reference parts and alternative options found for 2N6766. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6766, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| JANTX2N6766 | 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Intersil Corporation | 2N6766 vs JANTX2N6766 |
| 2N6766-QR-BR1 | 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6766 vs 2N6766-QR-BR1 |
| JANTXV2N6766 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | Harris Semiconductor | 2N6766 vs JANTXV2N6766 |
| JANTX2N6766 | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | Omnirel Corp | 2N6766 vs JANTX2N6766 |
| 2N6766-JQR-AR1 | 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 | TT Electronics Power and Hybrid / Semelab Limited | 2N6766 vs 2N6766-JQR-AR1 |
| 2N6766-JQR | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | 2N6766 vs 2N6766-JQR |
| 2N6766 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, | Unitrode Corporation | 2N6766 vs 2N6766 |
| 2N6766 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, | TT Electronics Resistors | 2N6766 vs 2N6766 |
| JANTX2N6766 | 30A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE | Motorola Mobility LLC | 2N6766 vs JANTX2N6766 |
| 2N6766 | Power Field-Effect Transistor, 30A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, TO-3, 2 PIN | Microsemi Corporation | 2N6766 vs 2N6766 |