IRF251
vs
2N6766-QR-B
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
SEMELAB LTD
|
| Reach Compliance Code |
unknown
|
compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Drain Current-Max (ID) |
30 A
|
30 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
|
| Surface Mount |
NO
|
NO
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Base Number Matches |
1
|
2
|
| Pbfree Code |
|
No
|
| Package Description |
|
FLANGE MOUNT, O-MBFM-P2
|
| DS Breakdown Voltage-Min |
|
200 V
|
| Drain-source On Resistance-Max |
|
0.085 Ω
|
| JEDEC-95 Code |
|
TO-3
|
| JESD-30 Code |
|
O-MBFM-P2
|
| Number of Terminals |
|
2
|
| Package Body Material |
|
METAL
|
| Package Shape |
|
ROUND
|
| Package Style |
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Qualification Status |
|
Not Qualified
|
| Terminal Form |
|
PIN/PEG
|
| Terminal Position |
|
BOTTOM
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare IRF251 with alternatives
Compare 2N6766-QR-B with alternatives