IRF251
vs
JANHCA2N6766
feature comparison
| Rohs Code |
No
|
No
|
| Part Life Cycle Code |
Obsolete
|
Active
|
| Ihs Manufacturer |
SAMSUNG SEMICONDUCTOR INC
|
INFINEON TECHNOLOGIES AG
|
| Reach Compliance Code |
unknown
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Configuration |
SINGLE
|
SINGLE
|
| Drain Current-Max (ID) |
30 A
|
30 A
|
| FET Technology |
METAL-OXIDE SEMICONDUCTOR
|
METAL-OXIDE SEMICONDUCTOR
|
| JESD-609 Code |
e0
|
e0
|
| Number of Elements |
1
|
1
|
| Operating Mode |
ENHANCEMENT MODE
|
ENHANCEMENT MODE
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation-Max (Abs) |
150 W
|
150 W
|
| Surface Mount |
NO
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
TIN LEAD
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
DIE-3
|
| Avalanche Energy Rating (Eas) |
|
500 mJ
|
| Case Connection |
|
DRAIN
|
| DS Breakdown Voltage-Min |
|
200 V
|
| Drain-source On Resistance-Max |
|
0.085 Ω
|
| JESD-30 Code |
|
S-XUUC-N3
|
| Number of Terminals |
|
3
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Shape |
|
SQUARE
|
| Package Style |
|
UNCASED CHIP
|
| Pulsed Drain Current-Max (IDM) |
|
120 A
|
| Qualification Status |
|
Qualified
|
| Reference Standard |
|
MIL-19500/543G
|
| Terminal Form |
|
NO LEAD
|
| Terminal Position |
|
UPPER
|
| Transistor Application |
|
SWITCHING
|
| Transistor Element Material |
|
SILICON
|
|
|
|
Compare IRF251 with alternatives
Compare JANHCA2N6766 with alternatives