Datasheets
FDS6910 by:

Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 7.5A, 17mΩ, 2500-REEL

Part Details for FDS6910 by onsemi

Overview of FDS6910 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDS6910

Part # Distributor Description Stock Price Buy
DISTI # 58M6638
Newark Dual Mosfet, Dual N Channel, 7.5 A, 30 V, 13 Mohm, 10 V, 1.8 V Rohs Compliant: Yes |Onsemi FDS6910 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
Buy Now
DISTI # 97J6790
Newark Dual N Channel Mosfet, 30V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:7.5A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDS6910 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
Bristol Electronics   1336
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 7.5A I(D), 30V, 0.013OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1068
  • 1 $1.4965
  • 68 $0.7483
  • 268 $0.5986
$0.5986 / $1.4965 Buy Now
DISTI # FDS6910
TME Transistor: N-MOSFET x2, unipolar, 30V, 7.5A, 1.6W, SO8 Min Qty: 1 0
  • 1 $1.0500
  • 5 $0.8600
  • 25 $0.7700
  • 100 $0.6900
  • 500 $0.6400
$0.6400 / $1.0500 RFQ

Part Details for FDS6910

FDS6910 CAD Models

FDS6910 Part Data Attributes:

FDS6910 onsemi
Buy Now Datasheet
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FDS6910 onsemi Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 7.5A, 17mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code End Of Life
Ihs Manufacturer ONSEMI
Package Description SOP-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 0.013 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 56 ns
Turn-on Time-Max (ton) 28 ns

Alternate Parts for FDS6910

This table gives cross-reference parts and alternative options found for FDS6910. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6910, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6910_NL Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6910 vs FDS6910_NL
FDS6910 7500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDS6910 vs FDS6910
FDS6910 Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6910 vs FDS6910
Part Number Description Manufacturer Compare
SI6926ADQ-T1-E3 TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix FDS6910 vs SI6926ADQ-T1-E3
LS5909 Small Signal Field-Effect Transistor, Linear Integrated Systems FDS6910 vs LS5909
FDC636P 2800mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 Rochester Electronics LLC FDS6910 vs FDC636P
SVN66AK Small Signal Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE Solitron Devices Inc FDS6910 vs SVN66AK
BSD840NL6327 Small Signal Field-Effect Transistor, 0.88A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6 Infineon Technologies AG FDS6910 vs BSD840NL6327
FDS6910 7500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC FDS6910 vs FDS6910
2N5909 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, Solitron Devices Inc FDS6910 vs 2N5909
SDF509 Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, Solitron Devices Inc FDS6910 vs SDF509
SI3441BDV-T1-E3 Small Signal Field-Effect Transistor, 2.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Vishay Intertechnologies FDS6910 vs SI3441BDV-T1-E3
TPC6007-H TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-3T1A, 6 PIN, FET General Purpose Small Signal Toshiba America Electronic Components FDS6910 vs TPC6007-H

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