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Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 7.5A, 17mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58M6638
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Newark | Dual Mosfet, Dual N Channel, 7.5 A, 30 V, 13 Mohm, 10 V, 1.8 V Rohs Compliant: Yes |Onsemi FDS6910 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
DISTI #
97J6790
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Newark | Dual N Channel Mosfet, 30V, Soic, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:7.5A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDS6910 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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Bristol Electronics | 1336 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 7.5A I(D), 30V, 0.013OHM, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 1068 |
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$0.5986 / $1.4965 | Buy Now |
DISTI #
FDS6910
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TME | Transistor: N-MOSFET x2, unipolar, 30V, 7.5A, 1.6W, SO8 Min Qty: 1 | 0 |
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$0.6400 / $1.0500 | RFQ |
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FDS6910
onsemi
Buy Now
Datasheet
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FDS6910
onsemi
Dual N-Channel Logic Level PowerTrench® MOSFET, 30V, 7.5A, 17mΩ, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | SOP-8 | |
Manufacturer Package Code | 751EB | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7.5 A | |
Drain-source On Resistance-Max | 0.013 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 56 ns | |
Turn-on Time-Max (ton) | 28 ns |
This table gives cross-reference parts and alternative options found for FDS6910. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6910, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDS6910_NL | Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6910 vs FDS6910_NL |
FDS6910 | 7500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | Rochester Electronics LLC | FDS6910 vs FDS6910 |
FDS6910 | Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | FDS6910 vs FDS6910 |