There are no models available for this part yet.
Overview of FDG326P by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 crosses )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 crosses )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for FDG326P by Fairchild Semiconductor Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 10 |
|
RFQ | ||||
Quest Components | 1500mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 8 |
|
$0.4816 / $0.6020 | Buy Now | ||
Rochester Electronics | Small Signal Field-Effect Transistor, 1.5A, 20V, P-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 524684 |
|
$0.0870 / $0.1024 | Buy Now |
CAD Models for FDG326P by Fairchild Semiconductor Corporation
Part Data Attributes for FDG326P by Fairchild Semiconductor Corporation
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code
|
SC-70
|
Package Description
|
SC-70, 6 PIN
|
Pin Count
|
6
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
20 V
|
Drain Current-Max (ID)
|
1.5 A
|
Drain-source On Resistance-Max
|
0.14 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PDSO-G6
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
6
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
P-CHANNEL
|
Power Dissipation-Max (Abs)
|
0.75 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for FDG326P
This table gives cross-reference parts and alternative options found for FDG326P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG326P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTJS3151PT2 | 2700mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, CASE 419B-02, SC-88, SC-70-6, 6 PIN | onsemi | FDG326P vs NTJS3151PT2 |
SI1403BDL-T1-GE3 | Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN | Vishay Intertechnologies | FDG326P vs SI1403BDL-T1-GE3 |
FDG316PD87Z | Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Fairchild Semiconductor Corporation | FDG326P vs FDG316PD87Z |
SI1441EDH-T1-GE3 | Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN | Vishay Intertechnologies | FDG326P vs SI1441EDH-T1-GE3 |
UZXM62P03E6 | Small Signal Field-Effect Transistor, 1.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | Diodes Incorporated | FDG326P vs UZXM62P03E6 |
UZXM62P03E6TC | Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN | Diodes Incorporated | FDG326P vs UZXM62P03E6TC |
NTJS3151PT2G | Single P-Channel Trench Power MOSFET with ESD Protection -12V -3.3A 60mΩ, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL | onsemi | FDG326P vs NTJS3151PT2G |
SI1403BDL-T1-E3 | Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN | Vishay Intertechnologies | FDG326P vs SI1403BDL-T1-E3 |
NTJS3151PT1G | Single P-Channel Trench Power MOSFET with ESD Protection -12V -3.3A 60mΩ, SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL | onsemi | FDG326P vs NTJS3151PT1G |
SI1403DL-T1 | Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN | Vishay Siliconix | FDG326P vs SI1403DL-T1 |
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