Datasheets
SI1403BDL-T1-GE3 by:

Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN

Part Details for SI1403BDL-T1-GE3 by Vishay Intertechnologies

Overview of SI1403BDL-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI1403BDL-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 86R3833
Newark P-Channel 2.5-V (G-S) Mosfet |Vishay SI1403BDL-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.1680
  • 6,000 $0.1600
  • 12,000 $0.1420
$0.1420 / $0.1680 Buy Now
DISTI # SI1403BDL-T1-GE3
Avnet Americas Trans MOSFET P-CH 20V 1.4A 6-Pin SC-70 T/R - Tape and Reel (Alt: SI1403BDL-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1955
  • 6,000 $0.1892
  • 12,000 $0.1830
  • 18,000 $0.1756
  • 24,000 $0.1699
  • 30,000 $0.1619
  • 300,000 $0.1539
$0.1539 / $0.1955 Buy Now
DISTI # SI1403BDL-T1-GE3
TTI MOSFET -20V Vds 12V Vgs SC-70 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 0
  • 3,000 $0.1590
  • 6,000 $0.1560
  • 9,000 $0.1530
  • 12,000 $0.1490
$0.1490 / $0.1590 Buy Now
Chip1Cloud Trans MOSFET P-CH 20V 1.4A 6-Pin SC-70 T/R 23000
RFQ
DISTI # SI1403BDL-T1-GE3
EBV Elektronik Trans MOSFET P-CH 20V 1.4A 6-Pin SC-70 T/R (Alt: SI1403BDL-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
Sense Electronic Company Limited SOT363 11800
RFQ

Part Details for SI1403BDL-T1-GE3

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SI1403BDL-T1-GE3 Part Data Attributes

SI1403BDL-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI1403BDL-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.625 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI1403BDL-T1-GE3

This table gives cross-reference parts and alternative options found for SI1403BDL-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1403BDL-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDG328P P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -1.5 A, 145 mΩ, 3000-REEL onsemi SI1403BDL-T1-GE3 vs FDG328P
SI1403BDL-T1-E3 Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies SI1403BDL-T1-GE3 vs SI1403BDL-T1-E3
FDG328PD87Z Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation SI1403BDL-T1-GE3 vs FDG328PD87Z
Part Number Description Manufacturer Compare
FDG328P P-Channel 2.5V Specified PowerTrench® MOSFET -20 V, -1.5 A, 145 mΩ, 3000-REEL onsemi SI1403BDL-T1-GE3 vs FDG328P
SI1441EDH-T1-GE3 Small Signal Field-Effect Transistor, 4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies SI1403BDL-T1-GE3 vs SI1441EDH-T1-GE3
BSV236SP Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-323, 3 PIN Infineon Technologies AG SI1403BDL-T1-GE3 vs BSV236SP
FDG330P Small Signal Field-Effect Transistor, 2A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation SI1403BDL-T1-GE3 vs FDG330P
SI1403CDL-T1-GE3 TRANSISTOR 2100 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 6 PIN, FET General Purpose Small Signal Vishay Siliconix SI1403BDL-T1-GE3 vs SI1403CDL-T1-GE3
NTJS3151PT1 2700mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, 2 X 2 MM, CASE 419B-02, SC-88, SC-70-6, 6 PIN onsemi SI1403BDL-T1-GE3 vs NTJS3151PT1
SI1403BDL-T1-E3 Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 6 PIN Vishay Intertechnologies SI1403BDL-T1-GE3 vs SI1403BDL-T1-E3
SI1403DL-T1 Small Signal Field-Effect Transistor, 1.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Vishay Siliconix SI1403BDL-T1-GE3 vs SI1403DL-T1
FDG330P P-Channel 1.8V Specified PowerTrench® MOSFET -12 V, -2 A, 110 mΩ, 3000-REEL onsemi SI1403BDL-T1-GE3 vs FDG330P
FDG328PD87Z Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation SI1403BDL-T1-GE3 vs FDG328PD87Z

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