Part Details for ECH8301 by SANYO Semiconductor Co Ltd
Overview of ECH8301 by SANYO Semiconductor Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for ECH8301
ECH8301 CAD Models
ECH8301 Part Data Attributes
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ECH8301
SANYO Semiconductor Co Ltd
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Datasheet
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ECH8301
SANYO Semiconductor Co Ltd
Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ECH8, 8 PIN
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | SANYO SEMICONDUCTOR CO LTD | |
Package Description | SMALL OUTLINE, R-PDSO-F8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for ECH8301
This table gives cross-reference parts and alternative options found for ECH8301. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ECH8301, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FSS139 | Power Field-Effect Transistor, 4A I(D), 20V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Semiconductor Co Ltd | ECH8301 vs FSS139 |
STS5PF20V | 5A, 20V, 0.1ohm, P-CHANNEL, Si, POWER, MOSFET, SO-8 | STMicroelectronics | ECH8301 vs STS5PF20V |
HAT1023R | Power Field-Effect Transistor, 7A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Hitachi Ltd | ECH8301 vs HAT1023R |
FW111 | Power Field-Effect Transistor, 5A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Electric Co Ltd | ECH8301 vs FW111 |
FSS133 | Power Field-Effect Transistor, 8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Electric Co Ltd | ECH8301 vs FSS133 |
HAT1023R | 7A, 20V, 0.06ohm, P-CHANNEL, Si, POWER, MOSFET, MS-012AA, SO-8 | Renesas Electronics Corporation | ECH8301 vs HAT1023R |