ECH8301 vs HAT1023R feature comparison

ECH8301 SANYO Semiconductor Co Ltd

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HAT1023R Renesas Electronics Corporation

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Part Life Cycle Code Obsolete Not Recommended
Ihs Manufacturer SANYO SEMICONDUCTOR CO LTD RENESAS ELECTRONICS CORP
Package Description SMALL OUTLINE, R-PDSO-F8 SMALL OUTLINE, R-PDSO-G8
Pin Count 8 8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V 20 V
Drain Current-Max (ID) 8 A 7 A
Drain-source On Resistance-Max 0.024 Ω 0.06 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8 R-PDSO-G8
Number of Elements 1 1
Number of Terminals 8 8
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Polarity/Channel Type P-CHANNEL P-CHANNEL
Pulsed Drain Current-Max (IDM) 40 A 56 A
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Form FLAT GULL WING
Terminal Position DUAL DUAL
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 1 3
Part Package Code SOIC
Date Of Intro 1995-05-01
JEDEC-95 Code MS-012AA
Operating Temperature-Max 150 °C
Power Dissipation-Max (Abs) 2.5 W

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Compare HAT1023R with alternatives