Datasheets
BSP135E-6327 by:

0.1A, 600V, 60ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN

Part Details for BSP135E-6327 by Siemens

Overview of BSP135E-6327 by Siemens

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Available Datasheets

Part # Manufacturer Description Datasheet
GP-IE156327SS-006 Amphenol Cables on Demand Amphenol GP-IE156327SS-006 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 6m
GP-IE156327SS-003 Amphenol Cables on Demand Amphenol GP-IE156327SS-003 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 3m
GP-IE156327SS-000.5 Amphenol Cables on Demand Amphenol GP-IE156327SS-000.5 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 0.5m

Part Details for BSP135E-6327

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BSP135E-6327 Part Data Attributes

BSP135E-6327 Siemens
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BSP135E-6327 Siemens 0.1A, 600V, 60ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN
Part Life Cycle Code Transferred
Ihs Manufacturer SIEMENS A G
Part Package Code SOT-223
Package Description SMALL OUTLINE, R-PDSO-G4
Pin Count 4
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.1 A
Drain-source On Resistance-Max 60 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
Number of Elements 1
Number of Terminals 4
Operating Mode DEPLETION MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSP135E-6327

This table gives cross-reference parts and alternative options found for BSP135E-6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSP135E-6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSP135L6327 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 BSP135E-6327 vs BSP135L6327
BSP135L6906 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 BSP135E-6327 vs BSP135L6906
BSP135E6906 Siemens Check for Price Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP135E-6327 vs BSP135E6906
BSP135 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, SOT-223, 4 PIN BSP135E-6327 vs BSP135
BSP135E6327 Siemens Check for Price Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN BSP135E-6327 vs BSP135E6327
Part Number Manufacturer Composite Price Description Compare
BSP300 Siemens Check for Price Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP135E-6327 vs BSP300
BSP300E6327 Siemens Check for Price Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP135E-6327 vs BSP300E6327
BSP324 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN BSP135E-6327 vs BSP324
BSP129E-6327 Siemens Check for Price 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN BSP135E-6327 vs BSP129E-6327
BSP129 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN BSP135E-6327 vs BSP129
BSP135 Siemens Check for Price Power Field-Effect Transistor, 0.1A I(D), 600V, 60ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET BSP135E-6327 vs BSP135
BSP129L6906 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4 BSP135E-6327 vs BSP129L6906
BSP88 Siemens Check for Price Power Field-Effect Transistor, 0.29A I(D), 240V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN BSP135E-6327 vs BSP88
BSP129E-6327 Infineon Technologies AG Check for Price 0.2A, 240V, 20ohm, N-CHANNEL, Si, POWER, MOSFET, SOT-223, 4 PIN BSP135E-6327 vs BSP129E-6327
BSP125 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, SOT-223, 4 PIN BSP135E-6327 vs BSP125

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