Datasheets
7N60L-TA3-T by: Unisonic Technologies Co Ltd

Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN

Part Details for 7N60L-TA3-T by Unisonic Technologies Co Ltd

Overview of 7N60L-TA3-T by Unisonic Technologies Co Ltd

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for 7N60L-TA3-T

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7N60L-TA3-T Part Data Attributes:

7N60L-TA3-T Unisonic Technologies Co Ltd
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7N60L-TA3-T Unisonic Technologies Co Ltd Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer UNISONIC TECHNOLOGIES CO LTD
Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 530 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 7.4 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 50 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 142 W
Pulsed Drain Current-Max (IDM) 29.6 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 520 ns
Turn-on Time-Max (ton) 305 ns

Alternate Parts for 7N60L-TA3-T

This table gives cross-reference parts and alternative options found for 7N60L-TA3-T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 7N60L-TA3-T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
7N60G-TA3-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N60G-TA3-T
Part Number Description Manufacturer Compare
7N60G-TA3-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N60G-TA3-T
STP8NC60 7A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics 7N60L-TA3-T vs STP8NC60
7N60ZL-TA3-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N60ZL-TA3-T
7N65ZG-TQ2-R Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N65ZG-TQ2-R
STP9NK60Z N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package STMicroelectronics 7N60L-TA3-T vs STP9NK60Z
7N65ZG-TQ2-T Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N65ZG-TQ2-T
7N60L-TQ2-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N60L-TQ2-T
STB9NK60ZFDT4 7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3 STMicroelectronics 7N60L-TA3-T vs STB9NK60ZFDT4
7N60ZL-TQ2-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N60ZL-TQ2-T
7N60L-T2Q-T Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN Unisonic Technologies Co Ltd 7N60L-TA3-T vs 7N60L-T2Q-T

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