Parametric results for: 7N60L-TA3-T under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

530.0 mJ 5

5 hits Apply

DRAIN 5

5 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 5

5 hits Apply

DS Breakdown Voltage-Min (1)

600 V 5

5 hits Apply

Drain Current-Max (ID) (1)

7.4 A 5

5 hits Apply

Drain-source On Resistance-Max (2)

1 Ω 2 1.2 Ω 3

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

50 pF 1

5 hits Apply

TO-220AB 5

5 hits Apply

R-PSFM-T3 5

5 hits Apply

Manufacturer (1)

Unisonic Technologies Co Ltd 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

3 5

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 1

5 hits Apply

PLASTIC/EPOXY 5

5 hits Apply

RECTANGULAR 5

5 hits Apply

FLANGE MOUNT 5

5 hits Apply

Active 5

5 hits Apply

NOT SPECIFIED 4

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

142 W 1

5 hits Apply

Surface Mount (1)

NO 5

5 hits Apply