Part Details for STB9NK60ZFDT4 by STMicroelectronics
Overview of STB9NK60ZFDT4 by STMicroelectronics
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for STB9NK60ZFDT4
STB9NK60ZFDT4 CAD Models
STB9NK60ZFDT4 Part Data Attributes
|
STB9NK60ZFDT4
STMicroelectronics
Buy Now
Datasheet
|
Compare Parts:
STB9NK60ZFDT4
STMicroelectronics
7A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, D2PAK-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 280 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 7 A | |
Drain-source On Resistance-Max | 0.95 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for STB9NK60ZFDT4
This table gives cross-reference parts and alternative options found for STB9NK60ZFDT4. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STB9NK60ZFDT4, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
7N60G-TQ2-T-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N60G-TQ2-T-R |
7N60L-T2Q-T-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N60L-T2Q-T-R |
7N65ZL-TA3-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N65ZL-TA3-T |
7N60L-T2Q-T | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N60L-T2Q-T |
7N60ZG-TQ2-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N60ZG-TQ2-R |
7N65ZG-TQ2-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, HALOGEN FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N65ZG-TQ2-T |
7N60G-TA3-T-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N60G-TA3-T-R |
STP9NK60Z | N-channel 600 V, 0.85 Ohm typ., 7 A Zener-protected SuperMESH(TM) Power MOSFET in D2PAK package | STMicroelectronics | STB9NK60ZFDT4 vs STP9NK60Z |
7N65ZL-TQ2-T | Power Field-Effect Transistor, 7.4A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, TO-263, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N65ZL-TQ2-T |
7N60L-TA3-T-R | Power Field-Effect Transistor, 7.4A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Unisonic Technologies Co Ltd | STB9NK60ZFDT4 vs 7N60L-TA3-T-R |