Part Details for 3SK274 by Toshiba America Electronic Components
Overview of 3SK274 by Toshiba America Electronic Components
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for 3SK274
3SK274 CAD Models
3SK274 Part Data Attributes
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3SK274
Toshiba America Electronic Components
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Datasheet
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3SK274
Toshiba America Electronic Components
TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | TOSHIBA CORP | |
| Package Description | USQ, 2-2K1B, 4 PIN | |
| Pin Count | 4 | |
| Reach Compliance Code | unknown | |
| Configuration | SINGLE | |
| FET Technology | METAL SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 0.03 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| JESD-30 Code | R-PDSO-G4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 17 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for 3SK274
This table gives cross-reference parts and alternative options found for 3SK274. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 3SK274, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE25139T1U71 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN | NEC Electronics America Inc | 3SK274 vs NE25139T1U71 |
| NE25139T1U74 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | 3SK274 vs NE25139T1U74 |
| 3SK299-U74 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 | NEC Electronics America Inc | 3SK274 vs 3SK299-U74 |
| 3SK320 | TRANSISTOR UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, 2-2K1B, 4 PIN, FET RF Small Signal | Toshiba America Electronic Components | 3SK274 vs 3SK320 |
| NE25139T1U73 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | 3SK274 vs NE25139T1U73 |
| NE25139-T1 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN | NEC Electronics America Inc | 3SK274 vs NE25139-T1 |
| 3SK299 | UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, PLASTIC, SO-4 | Renesas Electronics Corporation | 3SK274 vs 3SK299 |
| 3SK299-U72 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, MINIMOLD PACKAGE-4 | NEC Electronics Group | 3SK274 vs 3SK299-U72 |
| NE25139U71 | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, SOT-143, 4 PIN | NEC Electronics America Inc | 3SK274 vs NE25139U71 |
| NE25139-T1 | UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET | California Eastern Laboratories (CEL) | 3SK274 vs NE25139-T1 |